High Voltage IXSK35N120AU1 V = 1200 V CES IGBT with Diode I = 70 A C25 Combi Pack V =4 V CE(sat) Short Circuit SOA Capability TO-264 AA Symbol Test Conditions Maximum Ratings V T = 25 C to 150 C 1200 V CES J V T = 25 C to 150 C R = 1 M 1200 V CGR J GE C (TAB) V Continuous 20 V GES G C V Transient 30 V E GEM I T = 25 C70A C25 C G = Gate, C = Collector, I T = 90 C35A E = Emitter, TAB = Collector C90 C I T = 25 C, 1 ms 140 A CM C SSOA V = 15 V, T = 125 C, R = 22 I = 70 A GE J G CM (RBSOA) Clamped inductive load, L = 30 H 0.8 V CES Features t V = 15 V, V = 720 V, T = 125 C 10 s SC GE CE J (SCSOA) R = 22 non repetitive G International standard package P T = 25 C IGBT 300 W JEDEC TO-264 AA C C Diode 190 W High frequency IGBT and anti-parallel FRED in one package T -55 ... +150 C TM J 2nd generation HDMOS process T 150 C Low V JM CE(sat) - for minimum on-state conduction T -55 ... +150 C stg losses T 1.6 mm (0.063 in) from case for 10 s 300 C L MOS Gate turn-on - drive simplicity M Mounting torque 1.15/13 Nm/lb.in. d Fast Recovery Epitaxial Diode (FRED) Weight 10 g - soft recovery with low I RM Applications AC motor speed control Symbol Test Conditions Characteristic Values DC servo and robot drives (T = 25 C, unless otherwise specified) J DC choppers min. typ. max. Uninterruptible power supplies (UPS) Switch-mode and resonant-mode BV I = 5 mA, V = 0 V 1200 V CES C GE power supplies V I = 4 mA, V = V 48V GE(th) C CE GE Advantages I V = 0.8 V T = 25 C 750 A CES CE CES J V = 0 V T = 125 C15mA GE J Space savings (two devices in one package) I V = 0 V, V = 20 V 100 nA GES CE GE Easy to mount with one screw (isolated mounting screw hole) V I = I , V = 15 V 4 V CE(sat) C C90 GE High power density IXYS reserves the right to change limits, test conditions, and dimensions. 94526F(7/00) 2000 IXYS All rights reserved 1 - 2IXSK35N120AU1 Symbol Test Conditions Characteristic Values TO-264 AA Outline (T = 25 C, unless otherwise specified) J min. typ. max. g I = I V = 10 V, 20 26 S fs C C90 CE Pulse test, t 300 s, duty cycle 2 % I V = 15 V, V = 10 V 170 A C(on) GE CE C 3900 pF ies C V = 25 V, V = 0 V, f = 1 MHz 295 pF oes CE GE C 60 pF res Q 150 190 nC Dim. Millimeter Inches g Min. Max. Min. Max. Q I = I , V = 15 V, V = 0.5 V 40 60 nC ge C C90 GE CE CES A 4.82 5.13 .190 .202 A1 2.54 2.89 .100 .114 Q 70 100 nC gc A2 2.00 2.10 .079 .083 b 1.12 1.42 .044 .056 b1 2.39 2.69 .094 .106 t 80 ns d(on) Inductive load, T = 25 C b2 2.90 3.09 .114 .122 J c 0.53 0.83 .021 .033 t 150 ns ri I = I , V = 15 V, D 25.91 26.16 1.020 1.030 C C90 GE t 400 900 ns E 19.81 19.96 .780 .786 L = 100 H, V = 0.8 V , R = 2.7 d(off) CE CES G e 5.46 BSC .215 BSC t 500 700 ns J 0.00 0.25 .000 .010 fi K 0.00 0.25 .000 .010 E Note 1 10 mJ off L 20.32 20.83 .800 .820 L1 2.29 2.59 .090 .102 P 3.17 3.66 .125 .144 t 80 ns Inductive load, T = 125 C d(on) J Q 6.07 6.27 .239 .247 Q1 8.38 8.69 .330 .342 t 150 ns ri I = I , V = 15 V, C C90 GE R 3.81 4.32 .150 .170 R1 1.78 2.29 .070 .090 E L = 100 H 8mJ on S 6.04 6.30 .238 .248 t 400 ns V = 0.8 V , R = 2.7 T 1.57 1.83 .062 .072 d(off) CE CES G t 700 ns fi Note 1 E 15 mJ off R 0.42 K/W thJC R 0.15 K/W thCK Reverse Diode (FRED) Characteristic Values (T = 25 C, unless otherwise specified) J Symbol Test Conditions min. typ. max. V I = I , V = 0 V, Pulse test, 2.35 V F F C90 GE t 300 s, duty cycle d 2 %, T = 125 C J I I = I , V = 0 V, -di /dt = 480 A/ s3236A RM F C90 GE F t V = 540 V T = 100 C 225 ns rr R J I = 1 A -di/dt = 200 A/ s V = 30 V T =25 C40 60 ns F R J R 0.65 K/W thJC IXSK 35N120AU1 characteristic curves are located in the IXSH 35N120A data sheet, Publication No. D96001DE, pages 66 - 67. IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 2000 IXYS All rights reserved 2 - 2 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025