IGBT with Diode IXSK 50N60BU1 V = 600 V CES IXSX 50N60BU1 I = 75 A C25 V = 2.5 V CE(sat) Short Circuit SOA Capability PLUS247 (IXSX) Symbol Test Conditions Maximum Ratings C (TAB) G V T = 25 C to 150 C 600 V C CES J E V T = 25 C to 150 C R = 1 M 600 V CGR J GE TO-264 AA V Continuous 20 V GES (IXSK) V Transient 30 V GEM I T = 25 C, limited by leads 75 A C25 C I T = 90 C50A C90 C G C I T = 25 C, 1 ms 200 A CM C E SSOA V = 15 V, T = 125 C, R = 22 I = 100 A GE VJ G CM G = Gate, C = Collector, (RBSOA) Clamped inductive load, L = 30 H 0.8 V CES E = Emitter, TAB = Collector t V = 15 V, V = 360 V, T = 125 C 10 s SC GE CE J (SCSOA) R = 22 non repetitive Features G International standard package P T = 25 C 300 W C C JEDEC TO-264 AA, and hole-less T -55 ... +150 C TO-247 package for clip mounting J Guaranteed Short Circuit SOA T 150 C JM capability T -55 ... +150 C stg High frequency IGBT and anti- parallel FRED in one package M Mounting torque 0.9/6 Nm/lb.in. d TM Latest generation HDMOS process Weight 10 g Low V CE(sat) - for minimum on-state conduction Maximum lead temperature for soldering 300 C losses 1.6 mm (0.062 in.) from case for 10 s MOS Gate turn-on - drive simplicity Fast Recovery Epitaxial Diode (FRED) - soft recovery with low I RM Applications Symbol Test Conditions Characteristic Values AC motor speed control (T = 25 C, unless otherwise specified) J DC servo and robot drives min. typ. max. DC choppers Uninterruptible power supplies (UPS) BV I = 3 mA, V = 0 V 600 V CES C GE Switch-mode and resonant-mode V I = 4 mA, V = V 48V GE(th) C CE GE power supplies I V = 0.8 V T = 25 C 325 A CES CE CES J Advantages V = 0 V T = 125 C17mA GE J Space savings (two devices in one package) I V = 0 V, V = 20 V 100 nA GES CE GE Easy to mount with 1 screw (isolated mounting screw hole) V I = I V = 15 V, 2.2 2.5 V CE(sat) C C90 GE Reduces assembly time and cost IXYS reserves the right to change limits, test conditions, and dimensions. 97520A (12/98) 2000 IXYS All rights reserved 1 - 6IXSK 50N60BU1 IXSX 50N60BU1 Symbol Test Conditions Characteristic Values TM PLUS247 (IXSX) (T = 25 C, unless otherwise specified) J min. typ. max. g I = I V = 10 V, 20 23 S fs C C90 CE Pulse test, t 300 s, duty cycle 2 % I V = 15 V, V = 10 V 160 A C(on) GE CE C 3850 pF ies C V = 25 V, V = 0 V, f = 1 MHz 440 pF oes CE GE C 50 pF res Q 167 nC g Q I = I , V = 15 V, V = 0.5 V 45 nC ge C C90 GE CE CES Q 88 nC Dim. Millimeter Inches gc Min. Max. Min. Max. t Inductive load, T = 25 C 70 ns A 4.83 5.21 .190 .205 d(on) J A 2.29 2.54 .090 .100 1 t I = I , V = 15 V, L = 100 H, 70 ns ri C C90 GE A 1.91 2.16 .075 .085 2 V = 0.8 V , R = 2.7 b 1.14 1.40 .045 .055 CE CES G t 150 300 ns d(off) b 1.91 2.13 .075 .084 1 Remarks: Switching times may increase t 150 300 ns b 2.92 3.12 .115 .123 fi 2 for V (Clamp) > 0.8 V , higher T or CE CES J C 0.61 0.80 .024 .031 E 3.3 6.0 mJ off increased R D 20.80 21.34 .819 .840 G E 15.75 16.13 .620 .635 t 70 ns d(on) e 5.45 BSC .215 BSC Inductive load, T = 125 C J L 19.81 20.32 .780 .800 t 70 ns ri L1 3.81 4.32 .150 .170 I = I , V = 15 V, L = 100 H C C90 GE E 2.5 mJ Q 5.59 6.20 .220 .244 on V = 0.8 V , R = 2.7 R 4.32 4.83 .170 .190 CE CES G t 230 ns d(off) Remarks: Switching times may increase t 230 ns fi for V (Clamp) > 0.8 V , higher T or TO-264 AA Outline CE CES J increased R G E 4.8 mJ off R 0.42 K/W thJC R 0.15 K/W thCK Reverse Diode (FRED) Characteristic Values (T = 25 C, unless otherwise specified) J Symbol Test Conditions min. typ. max. Dim. Millimeter Inches Min. Max. Min. Max. V I = I , V = 0 V, 1.8 V F F C90 GE A 4.82 5.13 .190 .202 Pulse test, t 300 s, duty cycle d 2 % A1 2.54 2.89 .100 .114 A2 2.00 2.10 .079 .083 b 1.12 1.42 .044 .056 I I = I , V = 0 V, -di /dt = 480 A/ s1933A RM F C90 GE F b1 2.39 2.69 .094 .106 t V = 360 V T = 125 C 175 ns b2 2.90 3.09 .114 .122 rr R J c 0.53 0.83 .021 .033 I = 1 A -di/dt = 200 A/ s V = 30 V T =25 C35 50 ns F R J D 25.91 26.16 1.020 1.030 E 19.81 19.96 .780 .786 R 0.75 K/W e 5.46 BSC .215 BSC thJC J 0.00 0.25 .000 .010 K 0.00 0.25 .000 .010 L 20.32 20.83 .800 .820 L1 2.29 2.59 .090 .102 P 3.17 3.66 .125 .144 Q 6.07 6.27 .239 .247 Q1 8.38 8.69 .330 .342 R 3.81 4.32 .150 .170 R1 1.78 2.29 .070 .090 S 6.04 6.30 .238 .248 T 1.57 1.83 .062 .072 IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 2000 IXYS All rights reserved 2 - 6 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025