High Speed IGBT IXSH 10N60B2D1
V = 600 V
CES
IXSQ 10N60B2D1
with Diode I =20A
C25
Short Circuit SOA Capability V = 2.5 V
CE(sat)
Preliminary Data Sheet
D1
Symbol Test Conditions Maximum Ratings TO-247 (IXSH)
V T = 25C to 150C 600 V
CES J
V T = 25C to 150C; R = 1 M 600 V
CGR J GE
V Continuous 20 V
GES
V Transient 30 V
G
GEM
(TAB)
C
E
I T = 25C20A
C25 C
I T = 110C10A
C110 C TO-3P (IXSQ)
I 11 A
F(110)
I T = 25C, 1 ms 30 A
CM C
SSOA V = 15 V, T = 125C, R = 82 I = 20 A
GE J G CM
(RBSOA) Clamped inductive load, V = 20 V @ 0.8 V
GE CES
t V = 15 V, V = 360 V, T = 125C 10 s
G
SC GE CE J
C
(SCSOA) R = 150 , non repetitive
(TAB)
G
E
P T = 25C 100 W
G = Gate C = Collector
C C
E = Emitter TAB = Collector
T -55 ... +150 C
J
T 150 C
JM
Features
T -55 ... +150 C
stg
International standard package
M Mounting torque 1.3/10 Nm/lb. in Guaranteed Short Circuit SOA
d
capability
Weight TO-247 5 g
Low V
CE(sat)
TO-3P 5 g
- for low on-state conduction losses
High current handling capability
Maximum lead temperature for soldering 300 C
MOS Gate turn-on
1.6 mm (0.062 in.) from case for 10 s
- drive simplicity
Fast fall time for switching speeds
up to 20 kHz
Symbol Test Conditions Characteristic Values
(T = 25C, unless otherwise specified)
J
Applications
min. typ. max.
AC motor speed control
Uninterruptible power supplies (UPS)
BV I = 250 A, V = 0 V 600 V
CES C GE
Welding
V I = 750 A, V = V 4.0 7.0 V
GE(th) C CE GE
Advantages
I V = V 75 A
CES CE CES High power density
V = 0 V 200 A
GE
I V = 0 V, V = 20 V 100 nA
GES CE GE
V I = 10A, V = 15 V 2.5 V
CE(sat) C GE
DS99236(10/04)
2004 IXYS All rights reservedIXSH 10N60B2D1
IXSQ 10N60B2D1
Symbol Test Conditions Characteristic Values
TO-247 Outline
(T = 25C, unless otherwise specified)
J
min. typ. max.
g I = 10A; V = 10 V, Note 1 2.0 3.6 S
fs C CE
C 400 pF
ies
1 2 3
C V = 25 V, V = 0 V 50 pF
oes CE GE
f = 1 MHz
C 11 pF
res
Q 17 nC
g
Q I = 10A, V = 15 V, V = 0.5 V 6nC
ge C GE CE CES
Terminals: 1 - Gate 2 - Drain
Q 7.5 nC
3 - Source Tab - Drain
gc
Dim. Millimeter Inches
t 30 ns
Inductive load, T = 25C
d(on)
J
Min. Max. Min. Max.
t 30 ns
I = 10A, V = 15 V A 4.7 5.3 .185 .209
ri
C GE
A 2.2 2.54 .087 .102
1
V = 0.8 V , R = 30
t 180 ns
CE CES G
d(off) A 2.2 2.6 .059 .098
2
Switching times may increase for V
CE
b 1.0 1.4 .040 .055
t 165 ns
fi
(Clamp) > 0.8 V , higher T or
CES J b 1.65 2.13 .065 .084
1
E 430 750 J
increased R
b 2.87 3.12 .113 .123
off
G 2
C .4 .8 .016 .031
t 30 ns D 20.80 21.46 .819 .845
d(on) Inductive load, T = 125C
J
E 15.75 16.26 .610 .640
t 30 ns
I = 10 A, V = 15 V
ri
e 5.20 5.72 0.205 0.225
C GE
V = 0.8 V , R = 30 L 19.81 20.32 .780 .800
E 0.32 mJ
CE CES G
on
L1 4.50 .177
Switching times may increase for
t 260 ns
d(off)
P 3.55 3.65 .140 .144
V (Clamp) > 0.8 V , higher T
CE CES J
t 270 ns Q 5.89 6.40 0.232 0.252
fi
or increased R
G
R 4.32 5.49 .170 .216
E 790 J
off S 6.15 BSC 242 BSC
R 1.25 K/W
thJC
TO-3P Outline
R 0.25 K/W
thCS
Reverse Diode (FRED) Characteristic Values
(T = 25C, unless otherwise specified)
J
Symbol Test Conditions min. typ. max.
V I = 10A, V = 0 V T =150C 1.66 V
F F GE J
2.66 V
I I = 12A, V = 0 V, -di /dt = 100 A/s T = 100C 1.5 A
RM F GE F J
t V = 100 V T = 100C90 ns
rr R J
t I = 1 A; -di/dt = 100 A/s; V = 30 V 25 ns
Terminals: 1 - Gate 2 - Drain
rr F R
3 - Source Tab - Drain
R 2.5 K/W
thJC
Note 1: Pulse test, t 300 s, duty cycle d 2 %
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585
one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463