IXSH 20N60B2D1 V = 600 V High Speed IGBT CES I = 35 A C25 V = 2.5 V Short Circuit SOA Capability CE(sat) Preliminary Data Sheet D1 Symbol Test Conditions Maximum Ratings TO-247 (IXSH) V T = 25C to 150C 600 V CES J V T = 25C to 150C R = 1 M 600 V CGR J GE V Continuous 20 V GES G V Transient 30 V C GEM E I T = 25C35A C25 C G = Gate C = Collector I T = 110C20A C110 C E = Emitter TAB = Collector I 21 A F(110) I T = 25C, 1 ms 60 A CM C SSOA V = 15 V, T = 125C, R = 82 I = 32 A GE J G CM (RBSOA) Clamped inductive load 0.8 V Features CES t V = 15 V, V = 360 V, T = 125C 10 s SC GE CE J International standard package (SCSOA) R = 82 , non repetitive G Guaranteed Short Circuit SOA P T = 25C 190 W capability C C Low V CE(sat) T -55 ... +150 C J - for low on-state conduction losses T 150 C High current handling capability JM MOS Gate turn-on T -55 ... +150 C stg - drive simplicity Weight 2 g Fast fall time for switching speeds up to 20 kHz Maximum lead temperature for soldering 300 C 1.6 mm (0.062 in.) from case for 10 s Maximum tab temperature for soldering for 10s 260 C Applications AC motor speed control Symbol Test Conditions Characteristic Values Uninterruptible power supplies (UPS) (T = 25C, unless otherwise specified) J Welding min. typ. max. BV I = 250 A, V = 0 V 600 V CES C GE Advantages V I = 750 A, V = V 3.5 6.5 V GE(th) C CE GE High power density I V = V 85 A CES CE CES V = 0 V T = 125C 0.6 mA GE J I V = 0 V, V = 20 V 100 nA GES CE GE V I = 16A, V = 15 V 2.5 V CE(sat) C GE DS99174(10/04) 2004 IXYS All rights reservedIXSH 20N60B2D1 Symbol Test Conditions Characteristic Values TO-247 Outline (T = 25C, unless otherwise specified) J min. typ. max. g I = 16A V = 10 V, Note 1 3.5 7.0 S fs C CE C 800 pF ies 1 2 3 C V = 25 V, V = 0 V 110 pF oes CE GE C f = 1 MHz 28 pF res Q 33 nC g Q I = 16A, V = 15 V, V = 0.5 V 12 nC ge C GE CE CES Q 12 nC Terminals: 1 - Gate 2 - Drain gc 3 - Source Tab - Drain Inductive load, T = 25C J t 30 ns d(on) Dim. Millimeter Inches I = 16A, V = 15 V C GE t 30 ns Min. Max. Min. Max. ri V = 0.8 V , R = 10 CE CES G A 4.7 5.3 .185 .209 t 116 ns Switching times may increase for V d(off) A 2.2 2.54 .087 .102 CE 1 (Clamp) > 0.8 V , higher T or A 2.2 2.6 .059 .098 t 126 ns 2 CES J fi b 1.0 1.4 .040 .055 increased R G E 380 600 J b 1.65 2.13 .065 .084 off 1 b 2.87 3.12 .113 .123 2 t 30 ns C .4 .8 .016 .031 d(on) Inductive load, T = 125C J D 20.80 21.46 .819 .845 t 30 ns ri E 15.75 16.26 .610 .640 I = 16 A, V = 15 V C GE e 5.20 5.72 0.205 0.225 E 0.52 mJ V = 0.8 V , R = 10 on CE CES G L 19.81 20.32 .780 .800 Switching times may increase for t 180 ns L1 4.50 .177 d(off) V (Clamp) > 0.8 V , higher T P 3.55 3.65 .140 .144 CE CES J t 210 ns fi or increased R Q 5.89 6.40 0.232 0.252 G E 970 J R 4.32 5.49 .170 .216 off S 6.15 BSC 242 BSC R 0.66 K/W thJC R 0.25 K/W thCS Reverse Diode (FRED) Characteristic Values (T = 25C, unless otherwise specified) J Symbol Test Conditions min. typ. max. V I = 15A, V = 0 V T =150C 1.35 V F F GE J 2.10 V I I = 25A, V = 0 V, -di /dt = 100 A/s T = 100C 4.5 A RM F GE F J t V = 100 V T = 100C 110 ns rr R J t I = 1 A -di/dt = 100 A/s V = 30 V 30 ns rr F R R 1.6 K/W thJC Note 1: Pulse test, t 300 s, duty cycle d 2 % IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405B2 6,759,692 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463