V I t High Speed IGBT CES CES fi IXSH/IXST 30N60B 600 V 2.0 V 140 ns IXSH/IXST 30N60C 600 V 2.5 V 70 ns Short Circuit SOA Capability TO-247 AD (IXSH) Symbol Test Conditions Maximum Ratings V T = 25C to 150C 600 V CES J (TAB) V T = 25C to 150C R = 1 M 600 V CGR J GE V Continuous 20 V GES V Transient 30 V GEM TO-268 (D3) ( IXST) I T = 25C55A C25 C I T = 90C30A C90 C G I T = 25C, 1 ms 110 A CM C S (TAB) SSOA V = 15 V, T = 125C, R = 2.7 I = 60 A GE J G CM (RBSOA) Clamped inductive load, V = 0.8 V 0.8 V G = Gate CC CES CES S = Source TAB = Drain t V = 15 V, V = 360 V, T = 125C 10 s SC GE CE J (SCSOA) R = 33 , non repetitive G P T = 25C 200 W C C T -55 ... +150 C J T 150 C JM Features T -55 ... +150 C stg M Mounting torque (TO-247) 1.13/10 Nm/lb.in. International standard packages d Short Circuit SOA capability Weight TO-247 6 g High frequency IGBT TO-268 4 g TM New generation HDMOS process Maximum lead temperature for soldering 300 C 1.6 mm (0.062 in.) from case for 10 s Applications AC motor speed control DC servo and robot drives Symbol Test Conditions Characteristic Values DC choppers (T = 25C, unless otherwise specified) J Uninterruptible power supplies (UPS) min. typ. max. Switch-mode and resonant-mode power supplies BV I = 250 A, V = 0 V 600 V CES C GE V I = 2.5 mA, V = V 47V GE(th) C CE GE Advantages I V = 0.8 V T = 25C 100 A CES CE CES J Easy to mount with 1 screw V = 0 V T = 125C1mA GE J (isolated mounting screw hole) Surface mountable, high power case I V = 0 V, V = 20 V 100 nA GES CE GE style V V = 15 V I = I 30N60B 2.0 V Reduce assembly time and cost CE(sat) GE C C90 30N60C 2.5 V High power density 2001 IXYS All rights reserved 98519B (11/01)IXSH/IXST 30N60B IXSH/IXST 30N60C Symbol Test Conditions Characteristic Values TO-247 AD Outline (T = 25C, unless otherwise specified) J min. typ. max. g I = I V = 10 V, 10 S fs C C90 CE Pulse test, t 300 s, duty cycle 2 % C 3100 pF ies C V = 25 V, V = 0 V, f = 1 MHz 240 pF oes CE GE C 30 pF res Q 100 nC g Q I = I , V = 15 V, V = 0.5 V 30 nC ge C C90 GE CE CES Q 38 nC gc t 30 ns 1 = Gate d(on) 2 = Collector t Inductive load, T = 25C 30 ns ri J 3 = Emitter Tab = Collector t I = I , V = 15 V 30N60B 150 270 ns d(off) C C90 GE 30N60C 90 150 ns V = 0.8 V , R = 4.7 CE CES G Note 1 t 30N60B 140 270 ns fi 30N60C 70 120 ns E 30N60B 1.5 2.5 mJ off 30N60C 0.7 1.2 mJ t 35 ns d(on) Inductive load, T = 125C J t 35 ns ri I = I , V = 15 V C C90 GE E 0.5 mJ V = 0.8 V , R = 4.7 on CE CES G Note 1 t 30N60B 270 ns d(off) 30N60C 150 ns TO-268 Outline t 30N60B 250 ns fi 30N60C 140 E 30N60B 2.5 mJ off 30N60C 1.2 mJ R 0.62 K/W thJC R (TO-247) 0.25 K/W thCK Notes: 1. Switching times may increase for V (Clamp) > 0.8 V , higher T or CE CES J increased R . G Min Recommended Footprint IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025