High Speed IGBT IXSH 30N60B2D1
V = 600 V
CES
IXST 30N60B2D1
with Diode I = 48 A
C25
V = 2.5 V
CE(sat)
Short Circuit SOA Capability
Preliminary Data Sheet
Symbol Test Conditions Maximum Ratings TO-247 (IXSH)
V T = 25C to 150C 600 V
CES J
V T = 25C to 150C; R = 1 M 600 V
CGR J GE
V Continuous 20 V
GES
V Transient 30 V
C (TAB)
GEM G
C
E
I T = 25C48A
C25 C
I T = 110C30A
C110 C
I 28 A
TO-268 (IXST)
F(110)
I T = 25C, 1 ms 90 A
CM C
SSOA V = 15 V, T = 125C, R = 10 I = 48 A
GE J G CM
(RBSOA) Clamped inductive load @ 0.8 V
CES
G
E
C (TAB)
t V = 15 V, V = 360 V, T = 125C 10 s
SC GE CE J
(SCSOA) R = 10 , non repetitive
G
P T = 25C 250 W
C C
G = Gate C = Collector
E = Emitter TAB = Collector
T -55 ... +150 C
J
T 150 C
JM
Features
T -55 ... +150 C
stg
International standard package
Weight TO-247 6 g
Guaranteed Short Circuit SOA
TO-268 5 g
capability
Low V
Maximum lead temperature for soldering 300 C CE(sat)
- for low on-state conduction losses
1.6 mm (0.062 in.) from case for 10 s
High current handling capability
Maximum tab temperature for soldering for 10s 260 C
MOS Gate turn-on
- drive simplicity
Fast fall time for switching speeds
up to 20 kHz
Symbol Test Conditions Characteristic Values
Applications
(T = 25C, unless otherwise specified)
J
AC motor speed control
min. typ. max.
Uninterruptible power supplies (UPS)
Welding
V I = 750 A, V = V 4.0 7.0 V
GE(th) C CE GE
I V = V 150 A Advantages
CES CE CES
V = 0 V 1 mA High power density
GE
I V = 0 V, V = 20 V 100 nA
GES CE GE
V I = 24A, V = 15 V 2.5 V
CE(sat) C GE
DS99249(10/04)
2004 IXYS All rights reservedIXSH 30N60B2D1
IXST 30N60B2D1
Symbol Test Conditions Characteristic Values
TO-247 (IXSH) Outline
(T = 25C, unless otherwise specified)
J
min. typ. max.
g I = 24A; V = 10 V, Note 1 7.0 12.0 S
fs C CE
1 2 3
C 1220 pF
ies
C V = 25 V, V = 0 V 110 pF
oes CE GE
f = 1 MHz 20N60B2D1 140 pF
C 42 pF
res
Q 50 nC
g
Terminals: 1 - Gate 2 - Drain
Q I = 24A, V = 15 V, V = 0.5 V 23 nC
ge C GE CE CES
Dim. Millimeter Inches
Q 15 nC
gc
Min. Max. Min. Max.
A 4.7 5.3 .185 .209
Inductive load, T = 25C
t 30 ns
J
d(on)
A 2.2 2.54 .087 .102
1
I = 24A, V = 15 V
A 2.2 2.6 .059 .098
t 30 ns
C GE 2
ri
V = 400 V, R = 5 b 1.0 1.4 .040 .055
CE G
t 130 280 ns
d(off) b 1.65 2.13 .065 .084
Switching times may increase for V 1
CE
b 2.87 3.12 .113 .123
2
t (Clamp) > 0.8 V , higher T or 140 300 ns
fi CES J
C .4 .8 .016 .031
increased R
E G 0.55 1.0 mJ
D 20.80 21.46 .819 .845
off
E 15.75 16.26 .610 .640
t 30 ns e 5.20 5.72 0.205 0.225
d(on)
L 19.81 20.32 .780 .800
Inductive load, T = 125C
t 50 ns
J L1 4.50 .177
ri
P 3.55 3.65 .140 .144
I = 24 A, V = 15 V
E 20N60B2 0.32 mJ
C GE
on
Q 5.89 6.40 0.232 0.252
V = 400 V, R = 5
20N60B2D1 0.82 mJ
CE G
Switching times may increase for
t 202 ns
d(off)
V (Clamp) > 0.8 V , higher T
TO-268 (IXST) Outline
CE CES J
t 234 ns
or increased R
fi
G
E 1.18 mJ
off
R 0.50 K/W
thJC
R 0.21 K/W
thCS
Reverse Diode (FRED) Characteristic Values
(T = 25C, unless otherwise specified)
J
Symbol Test Conditions min. typ. max.
V I = 30A, V = 0 V T =150C 1.6 V
F F GE J
2.5 V
I I = 50A, V = 0 V, -di /dt = 100 A/s T = 100C 2.0 2.5 A
RM F GE F J
t V = 100 V T = 100C 150 ns
rr R J
t I = 1 A; -di/dt = 100 A/s; V = 30 V 30 ns
rr F R
R 0.9 K/W
thJC
Note 1: Pulse test, t 300 s, duty cycle d 2 %
IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585
one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405B2 6,759,692
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463