X2-Class V = 650V IXTN102N65X2 DSS Power MOSFET I = 76A D25 R 30m DS(on) N-Channel Enhancement Mode Avalanche Rated miniBLOC E153432 S G Symbol Test Conditions Maximum Ratings V T = 25 C to 150 C 650 V DSS J V T = 25 C to 150 C, R = 1M 650 V DGR J GS S V Continuous 30 V D GSS V Transient 40 V GSM G = Gate D = Drain I T = 25 C 76 A D25 C S = Source I T = 25 C, Pulse Width Limited by T 204 A DM C JM Either Source Terminal S can be used as I T = 25 C 25 A A C the Source Terminal or the Kelvin Source E T = 25 C 3 J AS C (Gate Return) Terminal. P T = 25 C 595 W D C dv/dt I I , V V , T 150C 50 V/ns S DM DD DSS J T -55 ... +150 C J Features T 150 C JM T -55 ... +150 C stg International Standard Package miniBLOC with Aluminum Nitride V 50/60 Hz, RMS, t = 1minute 2500 V~ ISOL Isolation I 1mA, t = 1s 3000 V~ ISOL Low Q G M Mounting Torque for Base Plate 1.5/13 Nm/lb.in d Avalanche Rated Terminal Connection Torque 1.3/11.5 Nm/lb.in Low Package Inductance Weight 30 g Advantages High Power Density Easy to Mount Space Savings Symbol Test Conditions Characteristic Values (T = 25 C Unless Otherwise Specified) Min. Typ. Max. J BV V = 0V, I = 1mA 650 V DSS GS D Applications V V = V , I = 250A 3.0 5.0 V GS(th) DS GS D Switch-Mode and Resonant-Mode Power Supplies I V = 30V, V = 0V 100 nA GSS GS DS DC-DC Converters PFC Circuits I V = V , V = 0V 25 A DSS DS DSS GS AC and DC Motor Drives T = 125 C 350 A J Robotics and Servo Controls R V = 10V, I = 51A, Note 1 30 m DS(on) GS D 2020 IXYS CORPORATION, All Rights Reserved DS100669B(1/20)IXTN102N65X2 Symbol Test Conditions Characteristic Values (T = 25 C, Unless Otherwise Specified) Min. Typ. Max J g V = 10V, I = 51A, Note 1 50 82 S fs DS D R Gate Input Resistance 0.7 Gi C 10.9 nF iss C V = 0V, V = 25V, f = 1MHz 6100 pF oss GS DS C 12.6 pF rss Effective Output Capacitance C 367 pF o(er) Energy related V = 0V GS C 1420 pF V = 0.8 V o(tr) Time related DS DSS t 37 ns d(on) Resistive Switching Times t 28 ns r V = 10V, V = 0.5 V , I = 51A GS DS DSS D t 67 ns d(off) R = 2 (External) G t 11 ns f Q 152 nC g(on) Q V = 10V, V = 0.5 V , I = 51A 57 nC gs GS DS DSS D Q 33 nC gd R 0.21 C/W thJC R 0.05 C/W thCS Source-Drain Diode Symbol Test Conditions Characteristic Values (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J I V = 0V 102 A S GS I Repetitive, Pulse Width Limited by T 408 A SM JM V I = I , V = 0V, Note 1 1.4 V SD F S GS t 450 ns rr I = 51A, -di/dt = 100A/ s F Q 11.7 C RM V = 100V, V = 0V R GS I 52 A RM Note 1. Pulse test, t 300 s, duty cycle, d 2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537