Advance Technical Information TM Linear L2 Power V = 200V IXTN110N20L2 DSS MOSFET w/Extended I = 100A D25 R 24m FBSOA DS(on) N-Channel Enhancement Mode Guaranteed FBSOA Avalanche Rated miniBLOC, SOT-227 E153432 S Symbol Test Conditions Maximum Ratings G V T = 25C to 150C 200 V DSS J V T = 25C to 150C, R = 1M 200 V DGR J GS V Continuous 20 V GSS S V Transient 30 V GSM D I T = 25C 100 A D25 C G = Gate D = Drain I T = 25C, Pulse Width Limited by T 275 A DM C JM S = Source I T = 25C 55 A A C E T = 25C 5 J Either Source Terminal S can be used as AS C the Source Terminal or the Kelvin Source P T = 25C 735 W D C (Gate Return) Terminal. T -55 ... +150 C J T 150 C JM Features T -55 ... +150 C stg T 1.6mm (0.062 in.) from Case for 10s 300 C L Designed for Linear Operation T Plastic Body for 10s 260 C SOLD International Standard Package V 50/60 Hz, RMS t = 1 Minute 2500 V~ Guaranteed FBSOA at 75C ISOL I 1mA t = 1 Second 3000 V~ Avalanche Rated ISOL Molding Epoxy Meets UL94 V-0 M Mounting Torque 1.5/13 Nm/lb.in. d Flammability Classification Terminal Connection Torque 1.3/11.5 Nm/lb.in. MiniBLOC with Aluminium Nitride Weight 30 g Isolation Applications Programmable Loads Current Regulators DC-DC Converters Symbol Test Conditions Characteristic Values Battery Chargers (T = 25C, Unless Otherwise Specified) Min. Typ. Max. J DC Choppers BV V = 0V, I = 1mA 200 V DSS GS D Temperature and Lighting Controls V V = V , I = 3mA 2.0 4.5 V GS(th) DS GS D Advantages I V = 20V, V = 0V 200 nA GSS GS DS Easy to Mount I V = V , V = 0V 50 A DSS DS DSS GS Space Savings T = 125C 2.5 mA J High Power Density R V = 10V, I = 55A, Note 1 24 m DS(on) GS D 2009 IXYS CORPORATION, All Rights Reserved DS100196(9/09) IXTN110N20L2 Symbol Test Conditions Characteristic Values SOT-227B (IXTN) Outline (T = 25C, Unless Otherwise Specified) Min. Typ. Max. J g V = 10V, I = 55A, Note 1 55 75 95 S fs DS D C 23 nF iss C V = 0V, V = 25V, f = 1MHz 2160 pF oss GS DS C 320 pF rss t 40 ns d(on) Resistive Switching Times t 100 ns r V = 10V, V = 0.5 V , I = 55A GS DS DSS D t 33 ns d(off) R = 1 (External) G t 135 ns f Q 500 nC g(on) (M4 screws (4x) supplied) Q V = 10V, V = 0.5 V , I = 55A 110 nC gs GS DS DSS D Q 182 nC gd R 0.17 C/W thJC R 0.05 C/W thCS Safe-Operating-Area Specification Symbol Test Conditions Characteristic Values Min. Typ. Max. SOA V = 200V, I = 1.75A, T = 75C , Tp = 3s 350 W DS D C Source-Drain Diode Symbol Test Conditions Characteristic Values (T = 25C, Unless Otherwise Specified) Min. Typ. Max. J I V = 0V 110 A S GS I Repetitive, Pulse Width Limited by T 440 A SM JM V I = 55A, V = 0V, Note 1 1.35 V SD F GS t 420 ns rr I = 55A, -di/dt = 100A/s, F I 39 A RM V = 100V, V = 0V R GS Q 8.3 C RM Note 1. Pulse Test, t 300s Duty Cycle, d 2%. ADVANCE TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a considered reflectio of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537