Preliminary Technical Information TM TrenchP V = - 200V IXTN120P20T DSS Power MOSFET I = - 106A D25 D R 30m DS(on) t 300ns rr P-Channel Enhancement Mode G Avalanche Rated S miniBLOC Fast Intrinsic Rectifier S E153432 S G Symbol Test Conditions Maximum Ratings S V T = 25C to 150C - 200 V DSS J D V T = 25C to 150C, R = 1M - 200 V DGR J GS V Continuous 15 V GSS G = Gate D = Drain V Transient 25 V S = Source GSM I T = 25C -106 A Either Source Terminal S can be used as D25 C the Source Terminal or the Kelvin Source I T = 25C, Pulse Width Limited by T - 400 A DM C JM (Gate Return) Terminal. I T = 25C -100 A A C E T = 25C3J AS C dv/dt I I , V V , T 150C 10 V/ns S DM DD DSS J Features P T = 25C 830 W D C z International Standard Package T -55 ... +150 C J z Low Intrinsic Gate Resistance T 150 C JM z miniBLOC with Aluminum Nitride T -55 ... +150 C stg Isolation V 50/60 Hz, RMS, t = 1minute 2500 V~ ISOL z Avalanche Rated I 1mA, t = 1s 3000 V~ z ISOL Extended FBSOA z Fast Intrinsic Recitifier M Mounting Torque for Base Plate 1.5/13 Nm/lb.in. d z Terminal Connection Torque 1.3/11.5 Nm/lb.in. Low R and Q DS(ON) G Weight 30 g Advantages z Easy to Mount z Space Savings z High Power Density Symbol Test Conditions Characteristic Values (T = 25C Unless Otherwise Specified) Min. Typ. Max. J Applications BV V = 0V, I = - 250A - 200 V DSS GS D z High-Side Switching V V = V , I = - 250A - 2.5 - 4.5 V GS(th) DS GS D z Push Pull Amplifiers I V = 15V, V = 0V 200 nA z GSS GS DS DC Choppers z Automatic Test Equipment I V = V , V = 0V - 25 A DSS DS DSS GS z Current Regulators T = 125C - 300 A J z Battery Charger Applications R V = -10V, I = 60A, Note 1 30 m DS(on) GS D 2013 IXYS CORPORATION, All Rights Reserved DS100402A(01/13) IXTN120P20T Symbol Test Conditions Characteristic Values SOT-227B (IXTN) Outline (T = 25C Unless Otherwise Specified) Min. Typ. Max. J g V = -10V, I = - 60A, Note 1 85 145 S fs DS D C 73 nF iss C V = 0V, V = - 25V, f = 1MHz 2550 pF oss GS DS C 480 pF rss t 90 ns d(on) Resistive Switching Times t 85 ns r V = -10V, V = 0.5 V , I = - 60A GS DS DSS D t 200 ns d(off) R = 1 (External) G t 50 ns (M4 screws (4x) supplied) f Q 740 nC g(on) Q V = -10V, V = 0.5 V , I = - 60A 220 nC gs GS DS DSS D Q 120 nC gd R 0.15 C/W thJC R 0.05 C/W thCS Source-Drain Diode Symbol Test Conditions Characteristic Values (T = 25C Unless Otherwise Specified) Min. Typ. Max. J I V = 0V -120 A S GS I Repetitive, Pulse Width Limited by T - 480 A SM JM V I = -100A, V = 0V, Note 1 -1.4 V SD F GS t 300 ns rr I = - 60A, -di/dt = -100A/s F Q 3.3 C RM V = -100V, V = 0V I R GS 25.6 A RM Note 1. Pulse test, t 300s, duty cycle, d 2%. PRELIMINARY TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from data gathered during objective characterizations of preliminary engineering lots but also may yet contain some information supplied during a pre-production design evaluation. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537