TM PolarP V = -100V IXTN170P10P DSS I = -170A Power MOSFET D25 R 14m DS(on) D P-Channel Enhancement Mode G Avalanche Rated S S miniBLOC, SOT-227 E153432 Symbol Test Conditions Maximum Ratings V T = 25 C to 150 C -100 V DSS J S V T = 25 C to 150 C, R = 1M -100 V G DGR J GS V Continuous 20 V GSS V Transient 30 V GSM I T = 25 C -170 A S D25 C I T = 25 C, Pulse Width Limited by T - 510 A D DM C JM I T = 25 C -170 A A C G = Gate D = Drain E T = 25 C 3.5 J AS C S = Source dv/dt I I , V V , T 150 C 10 V/ns S DM DD DSS J Either Source Terminal at miniBLOC P T = 25 C 890 W D C can be used as Main or Kelvin Source. T -55 ... +150 C J T 150 C JM Features T -55 ... +150 C stg V 50/60 Hz, RMS t = 1 minute 2500 V~ ISOL International Standard Package I 1mA t = 1 second 3000 V~ ISOL miniBLOC, with Aluminium Nitride M Mounting Torque 1.5/13 Nm/lb.in. Isolation d TM Terminal Connection Torque 1.3/11.5 Nm/lb.in. Rugged PolarP Process High Current Handling Capability Weight 30 g Fast Intrinsic Diode Avalanche Rated Low Package Inductance Advantages Symbol Test Conditions Characteristic Values Easy to Mount (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. Space Savings J High Power Density BV V = 0V, I = - 250A -100 V DSS GS D V V = V , I = -1mA - 2.0 - 4.0 V GS(th) DS GS D Applications I V = 20V, V = 0V 100 nA GSS GS DS High-Side Switches I V = V , V = 0V - 50 A DSS DS DSS GS Push Pull Amplifiers T = 125C - 250 A J DC Choppers R V = -10V, I = 0.5 I , Note 1 14 m DS(on) GS D D25 Automatic Test Equipment Current Regulators 2017 IXYS CORPORATION, All Rights Reserved DS99975C(5/17) IXTN170P10P Symbol Test Conditions Characteristic Values SOT-227B (IXTN) Outline (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J g V = -10V, I = 0.5 I , Note 1 35 58 S fs DS D D25 C 12.6 nF iss C V = 0V, V = - 25V, f = 1MHz 4190 pF oss GS DS C 930 pF rss t 32 ns d(on) Resistive Switching Times t 75 ns r V = -10V, V = 0.5 V , I = 0 .5 I GS DS DSS D D25 t 82 ns d(off) R = 1 (External) G t 45 ns f Q 240 nC g(on) (M4 screws (4x) supplied) Q V = -10V, V = 0.5 V , I = 0.5 I 45 nC gs GS DS DSS D D25 Q 120 nC gd R 0.14 C/W thJC R 0.05 C/W thCS Source-Drain Diode Symbol Test Conditions Characteristic Values (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J I V = 0V -170 A S GS I Repetitive, Pulse Width Limited by T - 680 A SM JM V I = - 85A, V = 0V, Note 1 - 3.3 V SD F GS t 176 ns rr I = - 85A, -di/dt = -100A/ s F Q 1.25 C RM V = - 50V, V = 0V R GS I -14.2 A RM Note 1: Pulse test, t 300s, duty cycle, d 2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537