TM Linear Power MOSFET V = 1200V IXTN17N120L DSS w/ Extended FBSOA I = 15A D25 D R < 900m DS(on) N-Channel Enhancement Mode G Avalanche Rated Guaranteed FBSOA S S miniBLOC E153432 S G Symbol Test Conditions Maximum Ratings V T = 25C to 150C 1200 V DSS J V T = 25C to 150C, R = 1M 1200 V DGR J GS S V Continuous 30 V GSS D V Transient 40 V GSM G = Gate D = Drain I T = 25C15 A D25 C S = Source I T = 25C, Pulse Width Limited by T 34 A DM C JM Either Source Terminal S can be used as I T = 25C 8.5 A A C the Source Terminal or the Kelvin Source E T = 25C 2.5 J (Gate Return) Terminal. AS C P T = 25C 540 W D C T -55 to +150 C Features J T 150 C JM z Designed for Linear Operations T -55 to +150 C stg z International Standard Package z V 50/60 Hz, RMS, t = 1minute 2500 V~ Molding Epoxies Meet UL94 V-0 ISOL Flammability Classification I 1mA, t = 1s 3000 V~ ISOL z Guaranteed FBSOA at 60C M Mounting Torque for Base Plate 1.5/13 Nm/lb.in. d z miniBLOC with Aluminum Nitride Terminal Connection Torque 1.3/11.5 Nm/lb.in. Isolation Weight 30 g z TM Low R HDMOS Process DS(on) z Rugged Polysilicon Gate Cell Structure z Low Package Inductance Symbol Test Conditions Characteristic Values (T = 25C, Unless Otherwise Specified) Min. Typ. Max. J Advantages BV V = 0V, I = 1mA 1200 V DSS GS D z Easy to Mount V V = V , I = 250A 3.0 6.0 V GS(th) DS GS D z Space Savings z I V = 30V, V = 0V 200 nA High Power Density GSS GS DS I V = V , V = 0V 50 A DSS DS DSS GS T = 125C 2 mA J Applications R V = 20V, I = 8.5A, Note 1 900 m DS(on) GS D z Programmable Loads z Current Regulators z DC-DC Convertors z Battery Chargers z DC Choppers z Temperature and Lighting Controls 2010 IXYS CORPORATION, All Rights Reserved DS99814C(05/10) IXTN17N120L Symbol Test Conditions Characteristic Values SOT-227B (IXTN) Outline (T = 25C, Unless Otherwise Specified) Min. Typ. Max. J g V = 20V, I = 8.5A, Note 1 3.5 5.0 6.5 S fs DS D C 8300 pF iss C V = 0V, V = 25V, f = 1MHz 520 pF oss GS DS C 90 pF rss t 42 ns d(on) Resistive Switching Times t 31 ns r V = 15V, V = 0.5 V , I = 8.5A GS DS DSS D t 110 ns d(off) R = 2 (External) G t 83 ns f Q 155 nC (M4 screws (4x) supplied) g(on) Q V = 15V, V = 0.5 V , I = 8.5A 41 nC gs GS DS DSS D Q 60 nC gd R 0.23 C/W thJC R 0.05 C/W thCS Safe Operating Area Specification Symbol Test Conditions Characteristic Values Min. Typ. Max. SOA V = 800V, I = 0.23A, T = 60C, t = 3s 184 W DS D C P Source-Drain Diode Symbol Test Conditions Characteristic Values (T = 25C, Unless Otherwise Specified) Min. Typ. Max. J I V = 0V 17 A S GS I Repetitive, Pulse Width Limited by T 50 A SM JM V I = 17A, V = 0V, Note 1 1.5 V SD F GS t I = 1830I , -di/dt = 100A/s, V = 100V ns rr F S R Note: 1. Pulse test, t 300s, duty cycle, d 2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537