Preliminary Technical Information TM TrenchMV V = 100V IXTN200N10T DSS Power MOSFET I = 200A D25 R 5.5m DS(on) N-Channel Enhancement Mode Avalanche Rated miniBLOC, SOT-227 B Symbol Test Conditions Maximum Ratings E153432 V T = 25C to 175C 100 V DSS J S G V T = 25C to 175C, R = 1M 100 V DGR J GS V Continuous 20 V GSS V Transient 30 V S GSM D I T = 25C 200 A D25 C I External lead current limit 100 A LRMS G = Gate D = Drain I T = 25C, pulse width limited by T 500 A DM C JM S = Source I T = 25C40A Either Source terminal at miniBLOC can be used A C as Main or Kelvin Source E T = 25C 1.5 J AS C P T = 25C 550 W D C T -55 ... +175 C Features J T 175 C JM z International standard package z T -55 ... +175 C miniBLOC, with Aluminium nitride stg isolation T 1.6mm (0.062 in.) from case for 10s 300 C L z Avalanche Rated z Low R and Q V 50/60 Hz, RMS t = 1min 2500 V~ DS(ON) G ISOL z Low package inductance I 1mA t = 1s 3000 V~ ISOL z Fast intrinsic Rectifier M Mounting torque 1.5/13 Nm/lb.in. d Advantages Terminal connection torque 1.3/11.5 Nm/lb.in. Weight 30 g Low gate charge drive requirement High power density Applications Symbol Test Conditions Characteristic Values DC-DC coverters (T = 25C, unless otherwise specified) Min. Typ. Max. J Battery chargers BV V = 0V, I = 250A 100 V Switched-mode and resonant-mode DSS GS D power supplies V V = V , I = 250A 2.5 4.5 V GS(th) DS GS D DC choppers AC and DC motor drives I V = 20V, V = 0V 200 nA GSS GS DS Uninterrupted power supplies High speed power switching I V = V 5 A DSS DS DSS applications V = 0V T = 150C 250 A GS J R V = 10V, I = 50A, Note 1 5.5 m DS(on) GS D 2008 IXYS CORPORATION, All rights reserved DS99678A(09/08) IXTN200N10T Symbol Test Conditions Characteristic Values SOT-227B Outline (T = 25C, unless otherwise specified) Min. Typ. Max. J g V = 10V, I = 60A, Note 1 60 96 S fs DS D C 9400 pF iss C V = 0V, V = 25V, f = 1MHz 1087 pF oss GS DS C 140 pF rss t 35 ns d(on) Resistive Switching Times t 31 ns r V = 10V, V = 0.5 V , I = 50A GS DS DSS D t 45 ns d(off) R = 3.3 (External) G t 34 ns f Q 152 nC g(on) Q V = 10V, V = 0.5 V , I = 25A 47 nC gs GS DS DSS D Q 47 nC gd R 0.27 C/W thJC R 0.05 C/W thCS Source-Drain Diode Characteristic Values (T = 25C, unless otherwise specified) J Symbol Test Conditions Min. Typ. Max. I V = 0V 200 A S GS I Repetitive, pulse width limited by T 500 A SM JM V I = 50A, V = 0V, Note 1 1.0 V SD F GS t 76 ns rr I = 100A, -di/dt = 100A/ s, V = 50V F R I 5.4 A RM V = 0V GS Q 205 nC RM Note 1: Pulse test, t 300s duty cycle, d 2%. PRELIMINARY TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from data gathered during objective characterizations of preliminary engineering lots but also may yet contain some information supplied during a pre-production design evaluation. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537