TM Linear Power MOSFET V = 1000V IXTN22N100L DSS I = 22A w/ Extended FBSOA D25 R 600m DS(on) N-Channel Enhancement Mode Avalanche Rated miniBLOC E153432 S Symbol Test Conditions Maximum Ratings G V T = 25C to 150C 1000 V DSS J V T = 25C to 150C, R = 1M 1000 V DGR J GS V Continuous 30 V GSS S V Transient 40 V GSM D I T = 25C 22 A D25 C I T = 25C, Pulse Width Limited by T 50 A G = Gate D = Drain DM C JM S = Source I T = 25C 22 A A C E T = 25C 1.5 J Either Source Terminal S can be used as AS C the Source Terminal or the Kelvin Source P T = 25C 700 W D C (Gate Return) Terminal. T -55 ... +150 C J T 150 C JM Features T -55 ... +150 C stg T 1.6mm (0.062 in.) from Case for 10s 300 C L MiniBLOC with Aluminium Nitride T Plastic Body for 10s 260 C SOLD Isolation V 50/60 Hz, RMS t = 1 Minute 2500 V~ Designed for Linear Operation ISOL International Standard Package I 1mA t = 1 Second 3000 V~ ISOL Avalanche Rated M Mounting Torque 1.5/13 Nm/lb.in. d Molding Epoxy Meets UL94 V-0 Terminal Connection Torque 1.3/11.5 Nm/lb.in. Flammability Classification Weight 30 g Advantages Easy to Mount Space Savings High Power Density Symbol Test Conditions Characteristic Values (T = 25C, Unless Otherwise Specified) Min. Typ. Max. J Applications BV V = 0V, I = 1mA 1000 V DSS GS D V V = V , I = 250A 3.0 5.5 V GS(th) DS GS D Programmable Loads Current Regulators I V = 30V, V = 0V 200 nA GSS GS DS DC-DC Converters I V = V , V = 0V 50 A DSS DS DSS GS Battery Chargers T = 125C 1 mA J DC Choppers Temperature and Lighting Controls R V = 20V, I = 0.5 I , Note 1 600 m DS(on) GS D DSS 2010 IXYS CORPORATION, All Rights Reserved DS99811B(10/10) IXTN22N100L Symbol Test Conditions Characteristic Values SOT-227B (IXTN) Outline (T = 25C, Unless Otherwise Specified) Min. Typ. Max. J g V = 20V, I = 0.5 I , Note 1 4.5 7.0 9.5 S fs DS D DSS C 7050 pF iss C V = 0V, V = 25V, f = 1MHz 600 pF oss GS DS C 100 pF rss t 36 ns d(on) Resistive Switching Times t 35 ns r V = 15V, V = 0.5 V , I = 0.5 I GS DS DSS D DSS t 80 ns d(off) R = 2 (External) G t 50 ns f Q 270 nC g(on) (M4 screws (4x) supplied) Q V = 15V, V = 0.5 V , I = 0.5 I 70 nC gs GS DS DSS D DSS Q 110 nC gd R 0.18 C/W thJC R 0.05 C/W thCS Safe-Operating-Area Specification Symbol Test Conditions Characteristic Values Min. Typ. Max. SOA V = 800V, I = 0.3A, T = 90C , tp = 5s 240 W DS D C Source-Drain Diode Symbol Test Conditions Characteristic Values (T = 25C, Unless Otherwise Specified) Min. Typ. Max. J I V = 0V 22 A S GS I Repetitive, Pulse Width Limited by T 50 A SM JM V I = I , V = 0V, Note 1 1.5 V SD F S GS t 1000 ns rr I = I , -di/dt = 100A/s V = 100V, V = 0V F S R GS Note 1. Pulse test, t 300s, duty cycle, d 2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537