X-On Electronics has gained recognition as a prominent supplier of IXTN22N100L Discrete Semiconductor Modules across the USA, India, Europe, Australia, and various other global locations. IXTN22N100L Discrete Semiconductor Modules are a product manufactured by IXYS. We provide cost-effective solutions for Discrete Semiconductor Modules, ensuring timely deliveries around the world.

IXTN22N100L IXYS

IXTN22N100L electronic component of IXYS
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See Product Specifications
Part No.IXTN22N100L
Manufacturer: IXYS
Category: Discrete Semiconductor Modules
Description: Discrete Semiconductor Modules 22 Amps 1000V
Datasheet: IXTN22N100L Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 58.8924 ea
Line Total: USD 58.89 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Fri. 06 Dec to Thu. 12 Dec
MOQ : 1
Multiples : 1
1 : USD 119.873
10 : USD 108.5936
100 : USD 99.1427

0
Ship by Wed. 04 Dec to Fri. 06 Dec
MOQ : 1
Multiples : 1
1 : USD 58.8924
10 : USD 54.9288
30 : USD 52.6284

0
Ship by Wed. 04 Dec to Fri. 06 Dec
MOQ : 1
Multiples : 1
1 : USD 65.5258

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Type
Vgs - Gate-Source Voltage
Mounting Style
Package / Case
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Technology
Configuration
Height
Length
Transistor Type
Width
Brand
Forward Transconductance - Min
Number Of Channels
Transistor Polarity
Channel Mode
Fall Time
Id - Continuous Drain Current
Pd - Power Dissipation
Product Type
Qg - Gate Charge
Rds On - Drain-Source Resistance
Rise Time
Factory Pack Quantity :
Subcategory
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Vds - Drain-Source Breakdown Voltage
Vgs Th - Gate-Source Threshold Voltage
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We are delighted to provide the IXTN22N100L from our Discrete Semiconductor Modules category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IXTN22N100L and other electronic components in the Discrete Semiconductor Modules category and beyond.

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TM Linear Power MOSFET V = 1000V IXTN22N100L DSS I = 22A w/ Extended FBSOA D25 R 600m DS(on) N-Channel Enhancement Mode Avalanche Rated miniBLOC E153432 S Symbol Test Conditions Maximum Ratings G V T = 25C to 150C 1000 V DSS J V T = 25C to 150C, R = 1M 1000 V DGR J GS V Continuous 30 V GSS S V Transient 40 V GSM D I T = 25C 22 A D25 C I T = 25C, Pulse Width Limited by T 50 A G = Gate D = Drain DM C JM S = Source I T = 25C 22 A A C E T = 25C 1.5 J Either Source Terminal S can be used as AS C the Source Terminal or the Kelvin Source P T = 25C 700 W D C (Gate Return) Terminal. T -55 ... +150 C J T 150 C JM Features T -55 ... +150 C stg T 1.6mm (0.062 in.) from Case for 10s 300 C L MiniBLOC with Aluminium Nitride T Plastic Body for 10s 260 C SOLD Isolation V 50/60 Hz, RMS t = 1 Minute 2500 V~ Designed for Linear Operation ISOL International Standard Package I 1mA t = 1 Second 3000 V~ ISOL Avalanche Rated M Mounting Torque 1.5/13 Nm/lb.in. d Molding Epoxy Meets UL94 V-0 Terminal Connection Torque 1.3/11.5 Nm/lb.in. Flammability Classification Weight 30 g Advantages Easy to Mount Space Savings High Power Density Symbol Test Conditions Characteristic Values (T = 25C, Unless Otherwise Specified) Min. Typ. Max. J Applications BV V = 0V, I = 1mA 1000 V DSS GS D V V = V , I = 250A 3.0 5.5 V GS(th) DS GS D Programmable Loads Current Regulators I V = 30V, V = 0V 200 nA GSS GS DS DC-DC Converters I V = V , V = 0V 50 A DSS DS DSS GS Battery Chargers T = 125C 1 mA J DC Choppers Temperature and Lighting Controls R V = 20V, I = 0.5 I , Note 1 600 m DS(on) GS D DSS 2010 IXYS CORPORATION, All Rights Reserved DS99811B(10/10) IXTN22N100L Symbol Test Conditions Characteristic Values SOT-227B (IXTN) Outline (T = 25C, Unless Otherwise Specified) Min. Typ. Max. J g V = 20V, I = 0.5 I , Note 1 4.5 7.0 9.5 S fs DS D DSS C 7050 pF iss C V = 0V, V = 25V, f = 1MHz 600 pF oss GS DS C 100 pF rss t 36 ns d(on) Resistive Switching Times t 35 ns r V = 15V, V = 0.5 V , I = 0.5 I GS DS DSS D DSS t 80 ns d(off) R = 2 (External) G t 50 ns f Q 270 nC g(on) (M4 screws (4x) supplied) Q V = 15V, V = 0.5 V , I = 0.5 I 70 nC gs GS DS DSS D DSS Q 110 nC gd R 0.18 C/W thJC R 0.05 C/W thCS Safe-Operating-Area Specification Symbol Test Conditions Characteristic Values Min. Typ. Max. SOA V = 800V, I = 0.3A, T = 90C , tp = 5s 240 W DS D C Source-Drain Diode Symbol Test Conditions Characteristic Values (T = 25C, Unless Otherwise Specified) Min. Typ. Max. J I V = 0V 22 A S GS I Repetitive, Pulse Width Limited by T 50 A SM JM V I = I , V = 0V, Note 1 1.5 V SD F S GS t 1000 ns rr I = I , -di/dt = 100A/s V = 100V, V = 0V F S R GS Note 1. Pulse test, t 300s, duty cycle, d 2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537

Tariff Desc

8541.30.00 20 No - Thyristors, diacs and triacs, other than photo- sensitive devices Free
IXS
IXYS
IXYS CORP
Ixys Corporation
IXYS INTEG.CIRCUITS DIV(CLARE)
IXYS Integrated Circuits
IXYS Integrated Circuits / Clare
IXYS Integrated Circuits Division
IXYS Integrated Circuits/Clare
IXYS RF
IXYS SEMICONDUCTOR
Littelfuse/IXYS
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