TM Linear Power MOSFET V = 1000V IXTN30N100L DSS w/ Extended FBSOA I = 30A D25 R 450m DS(on) N-Channel Enhancement Mode Avalanche Rated miniBLOC E153432 S G Symbol Test Conditions Maximum Ratings V T = 25C to 150C 1000 V DSS J V T = 25C to 150C, R = 1M 1000 V DGR J GS S V Continuous 30 V GSS D V Transient 40 V GSM I T = 25C 30 A D25 C G = Gate D = Drain I T = 25C, Pulse Width Limited by T 70 A DM C JM S = Source I T = 25C30A A C Either Source Terminal S can be used as E T = 25C2J AS C the Source Terminal or the Kelvin Source (Gate Return) Terminal. P T = 25C 800 W D C T -55 ... +150 C J T 150 C JM Features T -55 ... +150 C stg V 50/60 Hz, RMS t = 1 Minute 2500 V~ MiniBLOC with Aluminium Nitride ISOL Isolation I 1mA t = 1 Second 3000 V~ ISOL Designed for Linear Operation M Mounting Torque 1.5/13 Nm/lb.in. d International Standard Package Terminal Connection Torque 1.3/11.5 Nm/lb.in. Avalanche Rated Weight 30 g Molding Epoxy Meets UL94 V-0 Flammability Classification Advantages Easy to Mount Space Savings Symbol Test Conditions Characteristic Values High Power Density (T = 25C, Unless Otherwise Specified) Min. Typ. Max. J BV V = 0V, I = 1mA 1000 V DSS GS D Applications V V = V , I = 250A 3.0 5.5 V GS(th) DS GS D Programmable Loads I V = 30V, V = 0V 200 nA GSS GS DS Current Regulators I V = V , V = 0V 50 A DC-DC Converters DSS DS DSS GS T = 125C 1 mA Battery Chargers J DC Choppers R V = 20V, I = 0.5 I , Note 1 450 m DS(on) GS D DSS Temperature and Lighting Controls DS99813B(11/12) 2012 IXYS CORPORATION, All Rights Reserved IXTN30N100L Symbol Test Conditions Characteristic Values SOT-227B (IXTN) Outline (T = 25C, Unless Otherwise Specified) Min. Typ. Max. J g V = 20V, I = 0.5 I , Note 1 6 10 15 S fs DS D DSS C 13.7 nF iss C V = 0V, V = 25V, f = 1MHz 980 pF oss GS DS C 115 pF rss t 36 ns d(on) Resistive Switching Times t 70 ns r V = 15V, V = 0.5 V , I = 0.5 I GS DS DSS D DSS t 100 ns d(off) R = 2 (External) G t 78 ns f Q 545 nC g(on) (M4 screws (4x) supplied) Q V = 20V, V = 0.5 V , I = 0.5 I 86 nC gs GS DS DSS D DSS Q 165 nC gd R 0.156 C/W thJC R 0.05 C/W thCS Safe-Operating-Area Specification Symbol Test Conditions Characteristic Values Min. Typ. Max. SOA V = 600V, I = 0.5A, T = 90C 300 W DS D C Source-Drain Diode Symbol Test Conditions Characteristic Values (T = 25C, Unless Otherwise Specified) Min. Typ. Max. J I V = 0V 30 A S GS I Repetitive, Pulse Width Limited by T 120 A SM JM V I = I , V = 0V, Note 1 1.5 V SD F S GS t 1000 ns rr I = I , -di/dt = 100A/s V = 100V, V = 0V F S R GS Note 1. Pulse test, t 300s, duty cycle, d 2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537