TM PolarP V = - 600V IXTN32P60P DSS I = - 32A Power MOSFET D25 D R 350m DS(on) G P-Channel Enhancement Mode Avalanche Rated S S miniBLOC, SOT-227 E153432 Symbol Test Conditions Maximum Ratings S V T = 25C to 150C - 600 V DSS J G V T = 25C to 150C, R = 1M - 600 V DGR J GS V Continuous 20 V GSS V Transient 30 V GSM S I T = 25C - 32 A D25 C D I T = 25C, Pulse Width Limited by T - 96 A DM C JM I T = 25C - 32 A A C G = Gate D = Drain E T = 25C 3.5 J AS C S = Source dv/dt I I , V V , T 150C 10 V/ns S DM DD DSS J P T = 25C 890 W D C Either Source Terminal at miniBLOC T -55 ... +150 C can be used as Main or Kelvin Source. J T 150 C JM T -55 ... +150 C stg Features V 50/60 Hz, RMS t = 1 minute 2500 V~ ISOL I 1mA t = 1 second 3000 V~ ISOL z International Standard Package M Mounting Torque 1.5/13 Nm/lb.in. d z miniBLOC, with Aluminium Nitride Terminal Connection Torque 1.3/11.5 Nm/lb.in. Isolation z TM Weight 30 g Rugged PolarP Process z Avalanche Rated z Low Package Inductance Advantages z Symbol Test Conditions Characteristic Values Easy to Mount z (T = 25C, Unless Otherwise Specified) Min. Typ. Max. Space Savings J z High Power Density BV V = 0V, I = - 250A - 600 V DSS GS D V V = V , I = -1mA - 2.0 - 4.0 V GS(th) DS GS D Applications I V = 20V, V = 0V 100 nA GSS GS DS z High-Side Switches I V = V , V = 0V - 50 A DSS DS DSS GS z Push Pull Amplifiers T = 125C - 250 A J z DC Choppers R V = -10V, I = 0.5 I , Note 1 350 m z DS(on) GS D D25 Automatic Test Equipment z Current Regulators 2012 IXYS CORPORATION, All Rights Reserved DS99991B(12/12) IXTN32P60P Symbol Test Conditions Characteristic Values SOT-227B (IXTN) Outline (T = 25C, Unless Otherwise Specified) Min. Typ. Max. J g V = -10V, I = 0.5 I , Note 1 21 32 S fs DS D D25 C 11.1 nF iss C V = 0V, V = - 25V, f = 1MHz 925 pF oss GS DS C 77 pF rss t 37 ns d(on) Resistive Switching Times t 27 ns r V = -10V, V = 0.5 V , I = 0.5 I GS DS DSS D D25 t 95 ns d(off) R = 1 (External) G t 33 ns f Q 196 nC g(on) (M4 screws (4x) supplied) Q V = -10V, V = 0.5 V , I = 0.5 I 54 nC gs GS DS DSS D D25 Q 58 nC gd R 0.14 C/W thJC R 0.05 C/W thCS Source-Drain Diode Symbol Test Conditions Characteristic Values (T = 25C, Unless Otherwise Specified) Min. Typ. Max. J I V = 0V - 32 A S GS I Repetitive, Pulse Width Limited by T -128 A SM JM V I = -16A, V = 0V, Note 1 - 2.8 V SD F GS t 480 nS rr I = -16A, -di/dt = -150A/s F Q 11.4 C RM V = -100V, V = 0V R GS I - 47.6 A RM Note 1: Pulse test, t 300s, duty cycle, d 2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537