X4-Class V = 150V IXTN400N15X4 DSS TM Power MOSFET I = 400A D25 D R 2.35m DS(on) G N-Channel Enhancement Mode Avalanche Rated S S miniBLOC, SOT-227 E153432 S Symbol Test Conditions Maximum Ratings G V T = 25 C to 175 C 150 V DSS J V T = 25 C to 175 C, R = 1M 150 V DGR J GS V Continuous 20 V GSS S V Transient 30 V GSM D I T = 25 C (Chip Capability) 400 A D25 C I External Lead Current Limit 200 A L(RMS) G = Gate D = Drain I T = 25 C, Pulse Width Limited by T 900 A S = Source DM C JM I T = 25 C 200 A A C E T = 25 C3J AS C P T = 25 C 830 W D C Features dv/dt I I , V V , T 150C 50 V/ns S DM DD DSS J T -55 ... +175 C International Standard Package J T 175 C miniBLOC, with Aluminium Nitride JM T -55 ... +175 C Isolation stg Isolation Voltage 2500 V~ V 50/60 Hz, RMS t = 1 minute 2500 V~ ISOL High Current Handling Capability I 1mA t = 1 second 3000 V~ ISOL Low Q G Avalanche Rated M Mounting Torque 1.5/13 Nm/lb.in d Low Package Inductance Terminal Connection Torque 1.3/11.5 Nm/lb.in Weight 30 g Advantages High Power Density Easy to Mount Space Savings Symbol Test Conditions Characteristic Values (T = 25 C Unless Otherwise Specified) Min. Typ. Max. J Applications BV V = 0V, I = 1mA 150 V DSS GS D Switch-Mode and Resonant-Mode V V = V , I = 1mA 2.5 4.5 V GS(th) DS GS D Power Supplies DC-DC Converters I V = 20V, V = 0V 200 nA GSS GS DS PFC Circuits AC and DC Motor Drives I V = V , V = 0V 25 A DSS DS DSS GS Robotics and Servo Controls T = 150C 2 mA J R V = 10V, I = 100A, Note 1 2.35 m DS(on) GS D 2019 IXYS CORPORATION, All Rights Reserved DS100910C(11/19)IXTN400N15X4 Symbol Test Conditions Characteristic Values (T = 25C, Unless Otherwise Specified) Min. Typ. Max J g V = 10V, I = 60A, Note 1 100 170 S fs DS D R Gate Input Resistance 1.2 Gi C 14.5 nF iss C V = 0V, V = 25V, f = 1MHz 3.1 nF oss GS DS C 8.0 pF rss Effective Output Capacitance C 2500 pF o(er) V = 0V Energy related GS C 9400 pF V = 0.8 V o(tr) DS DSS Time related t 40 ns d(on) Resistive Switching Times t 22 ns r V = 10V, V = 0.5 V , I = 0.5 I GS DS DSS D D25 t 180 ns d(off) R = 1 (External) G t 8 ns f Q 430 nC g(on) Q V = 10V, V = 0.5 V , I = 0.5 I 100 nC gs GS DS DSS D D25 Q 100 nC gd R 0.18C/W thJC R 0.05C/W thCS Source-Drain Diode Symbol Test Conditions Characteristic Values (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J I V = 0V 400 A S GS I Repetitive, Pulse Width Limited by T 1600 A SM JM V I = 100A , V = 0V, Note 1 1.4 V SD F GS t 175 ns rr I = 150A, -di/dt = 100A/ s F Q 1.1 C RM V = 100V, V = 0V R GS I 12.3 A RM Note 1. Pulse test, t 300 s, duty cycle, d 2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537