TM PolarP V = - 500V IXTN40P50P DSS I = - 40A Power MOSFET D25 D R 230m DS(on) P-Channel Enhancement Mode G Avalanche Rated S miniBLOC, SOT-227 S E153432 S Symbol Test Conditions Maximum Ratings G V T = 25 C to 150 C - 500 V DSS J V T = 25 C to 150 C, R = 1M - 500 V DGR J GS V Continuous 20 V GSS S V Transient 30 V D GSM I T = 25 C - 40 A D25 C I T = 25 C, Pulse Width Limited by T - 120 A DM C JM G = Gate D = Drain S = Source I T = 25 C - 40 A A C E T = 25 C 3.5 J AS C Either Source Terminal at miniBLOC dv/dt I I , V V , T 150 C 10 V/ns S DM DD DSS J can be used as Main or Kelvin Source. P T = 25 C 890 W D C T -55 ... +150 C J T 150 C Features JM T -55 ... +150 C stg International Standard Package V 50/60 Hz, RMS t = 1 minute 2500 V~ ISOL miniBLOC, with Aluminium Nitride I 1mA t = 1 second 3000 V~ ISOL Isolation TM M Mounting Torque 1.5/13 Nm/lb.in Rugged PolarP Process d Terminal Connection Torque 1.3/11.5 Nm/lb.in Avalanche Rated Low Package Inductance Weight 30 g Advantages Easy to Mount Space Savings High Power Density Symbol Test Conditions Characteristic Values (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J Applications BV V = 0V, I = - 250A - 500 V DSS GS D High-Side Switches V V = V , I = -1mA - 2.0 - 4.5 V GS(th) DS GS D Push Pull Amplifiers I V = 20V, V = 0V 100 nA GSS GS DS DC Choppers I V = V , V = 0V - 50 A Automatic Test Equipment DSS DS DSS GS T = 125C - 250 A Current Regulators J R V = -10V, I = 0.5 I , Note 1 230 m DS(on) GS D D25 2015 IXYS CORPORATION, All Rights Reserved DS99936D(4/15) IXTN40P50P Symbol Test Conditions Characteristic Values SOT-227B (IXTN) Outline (T = 25 C, Unless Otherwise specified) Min. Typ. Max. J g V = -10V, I = 0.5 I , Note 1 23 38 S fs DS D D25 C 11.5 nF iss C V = 0V, V = - 25V, f = 1MHz 1150 pF oss GS DS C 93 pF rss t 37 ns d(on) Resistive Switching Times t 59 ns r V = -10V, V = 0.5 V , I = 0.5 I GS DS DSS D D25 t 90 ns d(off) R = 1 (External) G t 34 ns f Q 205 nC g(on) (M4 screws (4x) supplied) Q V = -10V, V = 0.5 V , I = 0.5 I 55 nC gs GS DS DSS D D25 Q 75 nC gd R 0.14 C/W thJC R 0.05 C/W thCS Source-Drain Diode Symbol Test Conditions Characteristic Values (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J I V = 0V - 40 A S GS I Repetitive, Pulse Width Limited by T -160 A SM JM V I = - 20A, V = 0V, Note 1 - 3.0 V SD F GS t 477 ns rr I = - 20A, -di/dt = -150A/ s F Q 14.5 C RM V = -100V, V = 0V R GS I - 61 A RM Note 1: Pulse test, t 300 s, duty cycle, d 2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537