Preliminary Technical Information TM TM TrenchT2 GigaMOS V = 55V IXTN550N055T2 DSS I = 550A Power MOSFET D25 R 1.30m DS(on) N-Channel Enhancement Mode Avalanche Rated miniBLOC, SOT-227 Fast Intrinsic Diode E153432 S Symbol Test Conditions Maximum Ratings G V T = 25C to 175C 55 V DSS J V T = 25C to 175C, R = 1M 55 V DGR J GS V Continuous 20 V GSS S V Transient 30 V GSM D I T = 25C (Chip Capability) 550 A D25 C I External Lead Current Limit 200 A L(RMS) G = Gate D = Drain I T = 25C, Pulse Width Limited by T 1650 A S = Source DM C JM I T = 25C 200 A A C E T = 25C3J Either Source Terminal S can be used as AS C the Source Terminal or the Kelvin Source P T = 25C 940 W D C ( Gate Return ) Terminal. T -55 ... +175 C J T 175 C JM T -55 ... +175 C Features stg T 1.6mm (0.062 in.) from Case for 10s 300 C L z International Standard Package T Plastic Body for 10s 260 C SOLD z miniBLOC, with Aluminium Nitride V 50/60 Hz, RMS t = 1 minute 2500 V~ Isolation ISOL z I 1mA t = 1 second 3000 V~ 175C Operating Temperature ISOL z Isolation Voltage 2500 V~ M Mounting Torque 1.5/13 Nm/lb.in. d z High Current Handling Capability Terminal Connection Torque 1.3/11.5 Nm/lb.in. z Fast Intrinsic Diode Weight 30 g z Avalanche Rated z Low R DS(on) Advantages z Easy to Mount Symbol Test Conditions Characteristic Values z (T = 25C, Unless Otherwise Specified) Min. Typ. Max. Space Savings J z High Power Density BV V = 0V, I = 250A 55 V DSS GS D Applications V V = V , I = 250A 2.0 4.0 V GS(th) DS GS D I V = 20V, V = 0V 200 nA z GSS GS DS DC-DC Converters and Off-Line UPS z Primary-Side Switch I V = V , V = 0V 10 A DSS DS DSS GS z High Speed Power Switching T = 150C 1 mA J Applications R V = 10V, I = 100A, Note 1 1.10 1.30 m DS(on) GS D 2009 IXYS CORPORATION, All Rights Reserved DS100173A(12/09) IXTN550N055T2 Symbol Test Conditions Characteristic Values SOT-227B (IXTN) Outline (T = 25C, Unless Otherwise Specified) Min. Typ. Max. J g V = 10V, I = 60A, Note 1 90 150 S fs DS D C 40 nF iss C V = 0V, V = 25V, f = 1MHz 4970 pF oss GS DS C 1020 pF rss R Gate Input Resistance 1.36 GI t 45 ns d(on) Resistive Switching Times t 40 ns r V = 10V, V = 0.5 V , I = 200A GS DS DSS D t 90 ns d(off) R = 1 (External) G t 230 ns f (M4 screws (4x) supplied) Q 595 nC g(on) Q V = 10V, V = 0.5 V , I = 0.5 I 150 nC gs GS DS DSS D DSS Q 163 nC gd R 0.16 C/W thJC R 0.05 C/W thCS Source-Drain Diode Symbol Test Conditions Characteristic Values (T = 25C, Unless Otherwise Specified) Min. Typ. Max. J I V = 0V 550 A S GS I Repetitive, Pulse Width Limited by T 1700 A SM JM V I = 100A, V = 0V, Note 1 1.2 V SD F GS t 100 ns I = 100A, V = 0V rr F GS I 5 A RM -di/dt = 100A/s Q 250 nC RM V = 27.5V R Note 1. Pulse test, t 300s, duty cycle, d 2%. PRELIMINARY TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from data gathered during objective characterizations of preliminary engineering lots but also may yet contain some information supplied during a pre-production design evaluation. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537