Preliminary Technical Information High Voltage Power V = 2500V IXTN5N250 DSS MOSFET w/ Extended I = 5A D25 FBSOA R < 8.8 DS(on) N-Channel Enhancement Mode Avalanche Rated Guaranteed FBSOA miniBLOC E153432 S G Symbol Test Conditions Maximum Ratings V T = 25C to 150C 2500 V DSS J V T = 25C to 150C, R = 1M 2500 V DGR J GS S V Continuous 30 V GSS D V Transient 40 V GSM G = Gate D = Drain I T = 25C 5 A D25 C S = Source I T = 25C, Pulse Width Limited by T 20 A DM C JM Either Source Terminal S can be used as I T = 25C 2.5 A A C the Source Terminal or the Kelvin Source E T = 25C 2.5 J (Gate Return) Terminal. AS C P T = 25C 700 W D C T -55 to +150 C J T 150 C JM Features T -55 to +150 C stg z International Standard Package V 50/60 Hz, RMS, t = 1minute 2500 V~ z ISOL Molding Epoxies Meet UL94 V-0 I 1mA, t = 1s 3000 V~ ISOL Flammability Classification z M Mounting Torque for Base Plate 1.5/13 Nm/lb.in. Guaranteed FBSOA at 75C d z Terminal Connection Torque 1.3/11.5 Nm/lb.in. miniBLOC with Aluminum Nitride Isolation Weight 30 g z Low Package Inductance Advantages Symbol Test Conditions Characteristic Values z Easy to Mount (T = 25C, Unless Otherwise Specified) Min. Typ. Max. J z Space Savings BV V = 0V, I = 1mA 2500 V z DSS GS D High Power Density V V = V , I = 1mA 2.0 5.0 V GS(th) DS GS D I V = 30V, V = 0V 200 nA GSS GS DS Applications I V = 2kV, V = 0V 50 A DSS DS GS z High Voltage Power Supplies T = 125C 4 mA J z Capacitor Discharge R V = 10V, I = 0.5 I , Note 1 8.8 z DS(on) GS D D25 Pulse Circuits 2010 IXYS CORPORATION, All Rights Reserved DS100273A(08/10) IXTN5N250 Symbol Test Conditions Characteristic Values SOT-227B (IXTN) Outline (T = 25C, Unless Otherwise Specified) Min. Typ. Max. J g V = 50V, I = 0.5 I , Note 1 3.0 4.5 6.0 S fs DS D D25 C 8560 pF iss C V = 0V, V = 25V, f = 1MHz 315 pF oss GS DS C 90 pF rss t 33 ns d(on) Resistive Switching Times t 20 ns r V = 10V, V = 0.5 V , I = 0.5 I GS DS DSS D D25 t 90 ns d(off) R = 1 (External) G t 44 ns f Q 200 nC (M4 screws (4x) supplied) g(on) Q V = 10V, V = 1000V, I = 0.5 I 28 nC gs GS DS D D25 Q 70 nC gd R 0.18 C/W thJC R 0.05 C/W thCS Safe Operating Area Specification Symbol Test Conditions Characteristic Values Min. Typ. Max. SOA V = 2000V, I = 0.11A, T = 75C, tp = 3s 220 W DS D C Source-Drain Diode Symbol Test Conditions Characteristic Values (T = 25C, Unless Otherwise Specified) Min. Typ. Max. J I V = 0V 5 A S GS I Repetitive, Pulse Width Limited by T 20 A SM JM V I = I , V = 0V, Note 1 1.5 V SD F S GS t I = 1.22.5A, -di/dt = 100A/s, V = 100V s rr F R Note: 1. Pulse test, t 300s, duty cycle, d 2%. PRELIMINARY TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from data gathered during objective characterizations of preliminary engineering lots but also may yet contain some information supplied during a pre-production design evaluation. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537