TM TM TrenchT2 GigaMOS V = 40V IXTN600N04T2 DSS I = 600A Power MOSFET D25 R 1.3m DS(on) N-Channel Enhancement Mode Avalanche Rated miniBLOC, SOT-227 Fast Intrinsic Diode E153432 S Symbol Test Conditions Maximum Ratings G V T = 25C to 175C 40 V DSS J V T = 25C to 175C, R = 1M 40 V DGR J GS V Transient 20 V GSM S I T = 25C (Chip Capability) 600 A D D25 C I External Lead Current Limit 200 A L(RMS) I T = 25C, Pulse Width Limited by T 1800 A DM C JM G = Gate D = Drain S = Source I T = 25C 200 A A C E T = 25C3J AS C Either Source Terminal S can be used as P T = 25C 940 W D C the Source Terminal or the Kelvin Source ( Gate Return ) Terminal. T -55 ... +175 C J T 175 C JM T -55 ... +175 C stg Features T 1.6mm (0.062 in.) from Case for 10s 300 C L T Plastic Body for 10s 260 C SOLD z International Standard Package z V 50/60 Hz, RMS t = 1 minute 2500 V~ miniBLOC, with Aluminium Nitride ISOL I 1mA t = 1 second 3000 V~ Isolation ISOL z 175C Operating Temperature M Mounting Torque 1.5/13 Nm/lb.in. d z Isolation Voltage 2500 V~ Terminal Connection Torque 1.3/11.5 Nm/lb.in. z High Current Handling Capability Weight 30 g z Fast Intrinsic Diode z Avalanche Rated z Low R DS(on) Advantages z Easy to Mount Symbol Test Conditions Characteristic Values z (T = 25C, Unless Otherwise Specified) Min. Typ. Max. Space Savings J z High Power Density BV V = 0V, I = 250A 40 V DSS GS D Applications V V = V , I = 250A 1.5 3.5 V GS(th) DS GS D I V = 20V, V = 0V 200 nA z GSS GS DS DC-DC Converters and Off-Line UPS z Primary-Side Switch I V = V , V = 0V 10 A DSS DS DSS GS z High Speed Power Switching T = 150C 1 mA J Applications R V = 10V, I = 100A, Note 1 1.3 m DS(on) GS D 2012 IXYS CORPORATION, All Rights Reserved DS100172B(10/12) IXTN600N04T2 Symbol Test Conditions Characteristic Values SOT-227B (IXTN) Outline (T = 25C, Unless Otherwise Specified) Min. Typ. Max. J g V = 10V, I = 60A, Note 1 90 150 S fs DS D C 40 nF iss C V = 0V, V = 25V, f = 1MHz 6400 pF oss GS DS C 1470 pF rss R Gate Input Resistance 1.32 GI t 40 ns d(on) Resistive Switching Times t 20 ns r V = 10V, V = 0.5 V , I = 200A GS DS DSS D t 90 ns d(off) R = 1 (External) G t 250 ns f (M4 screws (4x) supplied) Q 590 nC g(on) Q V = 10V, V = 0.5 V , I = 0.5 I 127 nC gs GS DS DSS D DSS Q 163 nC gd R 0.16 C/W thJC R 0.05 C/W thCS Source-Drain Diode Symbol Test Conditions Characteristic Values (T = 25C, Unless Otherwise Specified) Min. Typ. Max. J I V = 0V 600 A S GS I Repetitive, Pulse Width Limited by T 1800 A SM JM V I = 100A, V = 0V, Note 1 1.2 V SD F GS t 100 ns rr I = 150A, V = 0V F GS I 3.3 A RM -di/dt = 100A/s Q 165 nC RM V = 20V R Note 1. Pulse test, t 300s, duty cycle, d 2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537