TM LinearL2 V = 500V IXTN60N50L2 DSS Power MOSFET I = 53A D25 R 100m w/Extended FBSOA DS(on) N-Channel Enhancement Mode Extended FBSOA miniBLOC, SOT-227 E153432 S Symbol Test Conditions Maximum Ratings G V T = 25 C to 150 C 500 V DSS J V T = 25 C to 150 C, R = 1M 500 V DGR J GS V Continuous 30 V GSS S V Transient 40 V GSM D I T = 25 C 53 A D25 C G = Gate D = Drain I T = 25 C, pulse width limited by T 150 A DM C JM S = Source I T = 25 C60A A C E T = 25 C3J Either source terminal S can be used as the AS C source terminal or the Kelvin source (gate P T = 25 C 735 W D C return) terminal. T -55 ... +150 C J T 150 C JM T -55 ... +150 C stg Features V 50/60 Hz, RMS t = 1 minute 2500 V~ ISOL I 1mA t = 1 second 3000 V~ ISOL Designed for linear operation M Mounting torque 1.5/13 Nm/lb.in International standard package d Terminal Connection torque 1.3/11.5 Nm/lb.in Molding epoxy meets UL94 V-0 flammability classification Weight 30 g miniBLOC with Aluminium nitride isolation Guaranteed FBSOA at 75 C Applications Symbol Test Conditions Characteristic Values (T = 25 C, unless otherwise specified) Min. Typ. Max. Programmable loads J Current regulators BV V = 0V, I = 1mA 500 V DSS GS D DC-DC converters V V = V , I = 250A 2.5 4.5 V GS(th) DS GS D Battery chargers DC choppers I V = 30V, V = 0V 200 nA GSS GS DS Temperature and lighting controls I V = V , V = 0V 50A DSS DS DSS GS T = 125C 5 mA J Advantages R V = 10V, I = 30A, Note 1 100 m DS(on) GS D Easy to mount Space savings High power density 2015 IXYS CORPORATION, All Rights Reserved DS100086A(5/15) IXTN60N50L2 Symbol Test Conditions Characteristic Values SOT-227B (IXTN) Outline (T = 25 C, unless otherwise specified) Min. Typ. Max. J g V = 10V, I = 30A, Note 1 18 25 32 S fs DS D C 24 nF iss C V = 0V, V = 25V, f = 1MHz 1325 pF oss GS DS C 172 pF rss t 40 ns d(on) Resistive Switching Times t 40 ns r V = 15V, V = 0.5 V , I = 30A GS DS DSS D t 165 ns d(off) R = 0.5 (External) G t 38 ns f Q 610 nC g(on) (M4 screws (4x) supplied) Q V = 10V, V = 0.5 V , I = 30A 130 nC gs GS DS DSS D Q 365 nC gd R 0.17 C/W thJC R 0.05 C/W thCS Safe Operating Area Specification Symbol Test Conditions Min. Typ. Max. SOA V = 400V, I = 0.9A, T = 75C, tp = 3s 360 W DS D C Source-Drain Diode Symbol Test Conditions Characteristic Values (T = 25 C, unless otherwise specified) Min. Typ. Max. J I V = 0V 60 A S GS I Repetitive, pulse width limited by T 240 A SM JM V I = I , V = 0V, Note 1 1.5 V SD F S GS t 980 ns rr I = 60A, -di/dt = 100A/ s F I 73 A RM V = 100V, V = 0V R GS Q 35.8 C RM Note 1: Pulse test, t 300 s, duty cycle, d 2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537