TM Linear Power MOSFET V = 500V IXTN62N50L DSS I = 62A w/Extended FBSOA D25 R 100m DS(on) N-Channel Enhancement Mode Avalanche Rated miniBLOC Fast Intrinsic Diode E153432 S G Symbol Test Conditions Maximum Ratings V T = 25C to 150C 500 V DSS J V T = 25C to 150C, R = 1M 500 V S DGR J GS D V Continuous 30 V GSS V Transient 40 V GSM G = Gate D = Drain S = Source I T = 25C62A D25 C I T = 25C, Pulse Width Limited by T 150 A Either Source Terminal S can be used as DM C JM the Source Terminal or the Kelvin Source I T = 25C80A (Gate Return) Terminal. A C E T = 25C5J AS C P T = 25C 800 W D C Features T -55 ... +150 C J z 150 C International Standard Package T JM z Low Intrinsic Gate Resistance T -55 ... +150 C z stg miniBLOC with Aluminum Nitride Isolation V 50/60 Hz, RMS, t = 1minute 2500 V~ ISOL z Fast Intrinsic Diode I 1mA, t = 1s 3000 V~ z ISOL Extended FBSOA z Avalanche Rated M Mounting Torque for Base Plate 1.5/13 Nm/lb.in. d z Low R and Q Terminal Connection Torque 1.3/11.5 Nm/lb.in. DS(ON) G z Low Package Inductance Weight 30 g Advantages z High Power Density z Easy to Mount z Space Savings Symbol Test Conditions Characteristic Values (T = 25C, Unless Otherwise Specified) Min. Typ. Max. J Applications BV V = 0V, I = 1mA 500 V DSS GS D z Programmable Loads V V = V , I = 250A 3.0 5.5 V z GS(th) DS GS D DC-DC Converters z Current Regulators I V = 30V, V = 0V 200 nA GSS GS DS z Battery Chargers z DC Choppers I V = V , V = 0V 50 A DSS DS DSS GS z Temperature and Lighting T = 125C 1 mA J Controls R V = 20V, I = 0.5 I , Note 1 100 m DS(on) GS D D25 2011 IXYS CORPORATION, All Rights Reserved DS99812A(11/11) IXTN62N50L Symbol Test Conditions Characteristic Values SOT-227B (IXTN) Outline (T = 25C Unless Otherwise Specified) Min. Typ. Max. J g V = 10V, I = 0.5 I , Note 1 10 15 20 S fs DS D D25 C 11.5 nF iss C V = 0V, V = 25V, f = 1MHz 1460 pF oss GS DS C 210 pF rss t 36 ns d(on) Resistive Switching Times t 85 ns r V = 15V, V = 0.5 V , I = 0.5 I GS DS DSS D D25 t 110 ns d(off) R = 2 (External) G t 75 ns f (M4 screws (4x) supplied) Q 550 nC g(on) Q V = 20V, V = 0.5 V , I = 0.5 I 115 nC gs GS DS DSS D D25 Q 180 nC gd R 0.156 C/W thJC R 0.05 C/W thCS Safe Operating Area Specification Symbol Test Conditions Characteristic Values Min. Typ. Max. SOA V = 400V, I = 750mA, T = 90C 300 W DS D C Source-Drain Diode Symbol Test Conditions Characteristic Values (T = 25C, Unless Otherwise Specified) Min. Typ. Max. J I V = 0V 62 A S GS I Repetitive, Pulse Width Limited by T 176 A SM JM V I = I , V = 0V, Note 1 1.5 V SD F S GS t 500 ns rr I = I , V = 0V F S GS -di/dt = 100A/s, V = 100V R Note 1. Pulse test, t 300s, duty cycle, d 2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537