Advance Technical Information TM TrenchT4 V = 40V IXTN660N04T4 DSS I = 660A Power MOSFET D25 R 0.85m DS(on) D G N-Channel Enhancement Mode Avalanche Rated S S miniBLOC, SOT-227 Fast Intrinsic Diode E153432 S Symbol Test Conditions Maximum Ratings G V T = 25 C to 175 C 40 V DSS J V T = 25 C to 175 C, R = 1M 40 V DGR J GS V Transient 15 V GSM S I T = 25 C (Chip Capability) 660 A D25 C D I External Lead Current Limit 200 A L(RMS) I T = 25 C, Pulse Width Limited by T 1800 A G = Gate D = Drain DM C JM S = Source I T = 25 C 330 A A C E T = 25 C5J AS C Either Source Terminal S can be used as P T = 25 C 1040 W the Source Terminal or the Kelvin Source D C ( Gate Return ) Terminal. T -55 ... +175 C J T 175 C JM T -55 ... +175 C stg Features V 50/60 Hz, RMS t = 1 minute 2500 V~ ISOL I 1mA t = 1 second 3000 V~ International Standard Package ISOL miniBLOC, with Aluminium Nitride M Mounting Torque 1.5/13 Nm/lb.in d Isolation Terminal Connection Torque 1.3/11.5 Nm/lb.in 175C Operating Temperature Weight 30 g Isolation Voltage 2500 V~ High Current Handling Capability Fast Intrinsic Diode Avalanche Rated Low R DS(on) Advantages Symbol Test Conditions Characteristic Values Easy to Mount (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J Space Savings BV V = 0V, I = 250A 40 V DSS GS D High Power Density V V = V , I = 250A 2.0 4.0 V GS(th) DS GS D I V = 15V, V = 0V 200 nA Applications GSS GS DS I V = V , V = 0V 10 A DSS DS DSS GS DC-DC Converters and Offi-Line UPS T = 150C 1.5 mA J Primary-Side Switch R V = 10V, I = 100A, Note 1 0.85 m High Speed Power Switching DS(on) GS D Applications 2016 IXYS CORPORATION, All Rights Reserved DS100728A(7/16) IXTN660N04T4 Symbol Test Conditions Characteristic Values SOT-227B (IXTN) Outline (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J g V = 10V, I = 60A, Note 1 110 180 S fs DS D C 44.0 nF iss C V = 0V, V = 25V, f = 1MHz 6.5 nF oss GS DS C 3.5 nF rss R Gate Input Resistance 2.5 GI t 40 ns d(on) Resistive Switching Times t 430 ns r V = 10V, V = 0.5 V , I = 0.5 I GS DS DSS D DSS t R = 1 (External) 386 ns d(off) G t 260 ns f (M4 screws (4x) supplied) Q 860 nC g(on) Q V = 10V, V = 0.5 V , I = 0.5 I 240 nC gs GS DS DSS D DSS Q 290 nC gd R 0.144 C/W thJC R 0.05 C/W thCS Source-Drain Diode Symbol Test Conditions Characteristic Values (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J I V = 0V 660 A S GS I Repetitive, Pulse Width Limited by T 2640 A SM JM V I = 100A, V = 0V, Note 1 1.4 V SD F GS t 60 ns rr I = 150A, V = 0V F GS I 2.1 A RM -di/dt = 100A/ s Q 63 nC RM V = 30V R Note 1. Pulse test, t 300 s, duty cycle, d 2%. ADVANCE TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute aconsidered reflectio of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537