Linear Power MOSFET V = 1500V IXTN8N150L DSS w/Extended FBSOA I = 7.5A D25 D R 3.6 DS(on) N-Channel Enhancement Mode G Guaranteed FBSOA S S miniBLOC, SOT-227 B E153432 S G Symbol Test Conditions Maximum Ratings V T = 25C to 150C 1500 V DSS J V T = 25C to 150C, R = 1M 1500 V DGR J GS S V Continuous 30 V GSS D V Transient 40 V GSM I T = 25C 7.5 A D25 C G = Gate D = Drain I T = 25C, Pulse Width Limited by T 20 A DM C JM S = Source S = Source P T = 25C 545 W D C T -55 to +150 C J Features T 150 C JM T -55 to +150 C stg z Designed for Linear Operations z V 50/60 Hz, RMS, t = 1minute 2500 V~ International Standard Package ISOL z I 1mA, t = 1s 3000 V~ Molding Epoxies Meet UL94 V-0 ISOL Flammability Classification M Mounting Torque for Base Plate 1.5/13 Nm/lb.in. d z Guaranteed FBSOA at 60C Terminal Connection Torque 1.3/11.5 Nm/lb.in. z miniBLOC with Aluminum Nitride Weight 30 g Isolation z TM Low R HDMOS Process DS(on) z Rugged Polysilicon Gate Cell Structure z Low Package Inductance Applications Symbol Test Conditions Characteristic Values (T = 25C, Unless Otherwise Specified) Min. Typ. Max. J z Programmable Loads BV V = 0V, I = 1mA 1500 V z DSS GS D Current Regulators z V V = V , I = 250A 5.0 8.0 V DC-DC Convertors GS(th) DS GS D z Battery Chargers I V = 30V, V = 0V 200 nA GSS GS DS z DC Choppers z I V = V V = 0V 25 A DSS DS DSS, GS Temperature and Lighting Controls T = 125C 500 A J R V = 20V, I = 4A, Note 1 3.6 DS(on) GS D Advantages z Easy to Mount z Space Savings z High Power Density 2013 IXYS CORPORATION, All rights reserved DS99815B(3/13) IXTN8N150L Symbol Test Conditions Characteristic Values SOT-227B (IXTN) Outline (T = 25C, Unless Otherwise Specified) Min. Typ. Max. J g V = 50V, I = 4A, Note 1 1.4 2.3 3.2 S fs DS D C 8000 pF iss C V = 0V, V = 25V, f = 1MHz 405 pF oss GS DS C 70 pF rss t 36 ns d(on) Resistive Switching Times t 18 ns r V = 15V, V = 0.5 V , I = 4A GS DS DSS D t 90 ns d(off) R = 2 (External) G t 95 ns f (M4 screws (4x) supplied) Q 250 nC g(on) Q V = 15V, V = 0.5 V , I = 4A 80 nC gs GS DS DSS D Q 116 nC gd R 0.23 C/W thJC R 0.05 C/W thCS Safe Operating Area Specification Symbol Test Conditions Characteristic Values Min. Typ. Max. SOA V = 1500V, I = 0.17A, T = 60C, T = 3s 255 W DS D C P Source-Drain Diode Symbol Test Conditions Characteristic Values (T = 25C, Unless Otherwise Specified) Min. Typ. Max. J I V = 0V 8 A S GS I Repetitive, Pulse Width Limited by T 32 A SM JM V I = 8A, V = 0V, Note 1 1.2 V SD F GS t I = 1700I , -di/dt = 100A/s, V = 100V ns rr F S R Notes: 1. Pulse Test, t 300s Duty Cycle, d 2%. IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or moreof the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537