TM Linear L2 V = 250V IXTN90N25L2 DSS Power MOSFET I = 90A D25 w/ Extended FBSOA R 36m DS(on) N-Channel Enhancement Mode Guaranteed FBSOA miniBLOC, SOT-227 Avalanche Rated E153432 S G Symbol Test Conditions Maximum Ratings V T = 25 C to 150 C 250 V DSS J V T = 25 C to 150 C, R = 1M 250 V DGR J GS V Continuous 20 V S GSS V Transient 30 V D GSM I T = 25 C 90 A D25 C G = Gate D = Drain I T = 25 C, Pulse Width Limited by T 360 A DM C JM S = Source I T = 25 C 45 A A C Either Source Terminal S can be used as E T = 25 C 3 J AS C the Source Terminal or the Kelvin Source (Gate Return) Terminal. P T = 25 C 735 W D C T -55 ... +150 C J T 150 C JM Features T -55 ... +150 C stg V 50/60 Hz, RMS t = 1 minute 2500 V~ ISOL Designed for Linear Operation I 1mA t = 1 second 3000 V~ ISOL International Standard Package M Mounting Torque 1.5/13 Nm/lb.in Guaranteed FBSOA at 75C d Terminal Connection Torque 1.3/11.5 Nm/lb.in Avalanche Rated Molding Epoxy Meets UL94 V-0 Weight 30 g Flammability Classification MiniBLOC with Aluminium Nitride Isolation Applications Programmable Loads Current Regulators DC-DC Converters Symbol Test Conditions Characteristic Values Battery Chargers (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J DC Choppers BV V = 0V, I = 1mA 250 V DSS GS D Temperature and Lighting Controls V V = V , I = 3mA 2.0 4.5 V GS(th) DS GS D Advantages I V = 20V, V = 0V 200 nA GSS GS DS Easy to Mount I V = V , V = 0V 50 A DSS DS DSS GS Space Savings T = 125C 2.5 mA J High Power Density R V = 10V, I = 45A, Note 1 36 m DS(on) GS D 2016 IXYS CORPORATION, All Rights Reserved DS100103A(4/16) IXTN90N25L2 Symbol Test Conditions Characteristic Values SOT-227B (IXTN) Outline (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J g V = 10V, I = 0.5 I , Note 1 35 50 65 S fs DS D D25 C 23 nF iss C V = 0V, V = 25V, f = 1MHz 2140 pF oss GS DS C 360 pF rss t 50 ns d(on) Resistive Switching Times t 175 ns r V = 10V, V = 0.5 V , I = 0.5 I GS DS DSS D D25 t 40 ns d(off) R = 1 (External) G t 160 ns f Q 640 nC g(on) (M4 screws (4x) supplied) Q V = 10V, V = 0.5 V , I = 0.5 I 125 nC gs GS DS DSS D D25 Q 385 nC gd R 0.17C/W thJC R 0.05 C/W thCS Safe Operating Area Specification Symbol Test Conditions Min. Typ. Max. SOA V = 250V, I = 1.4A, T = 75C, tp = 3s 350 W DS D C Source-Drain Diode Symbol Test Conditions Characteristic Values (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J I V = 0V 90 A S GS I Repetitive, Pulse Width Limited by T 360 A SM JM V I = 45A, V = 0V, Note 1 1.5 V SD F GS t 266 ns rr I = 45A, -di/dt = 100A/ s F I 23 A RM V = 80V, V = 0V R GS Q 3.0 C RM Note: 1. Pulse test, t 300 s, duty cycle, d 2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537