TM Trench V = 250V IXTA76N25T DSS Power MOSFET I = 76A IXTP76N25T D25 R 44m DS(on) IXTQ76N25T N-Channel Enhancement Mode Typical Avalanched BV = 300V IXTH76N25T TO-263 AA (IXTA) TO-220AB (IXTP) TO-3P (IXTQ) G G S D G D D (Tab) D (Tab) S S D (Tab) TO-247(IXTH) Symbol Test Conditions Maximum Ratings V T = 25 C to 150 C 250 V DSS J V T = 25 C to 150 C, R = 1M 250 V DGR J GS V Continuous 20 V GSS V Transient 30 V G GSM D D (Tab) S I T = 25 C76A D25 C I T = 25 C, Pulse Width Limited by T 170 A DM C JM G = Gate D = Drain I T = 25 C8A A C S = Source Tab = Drain E T = 25 C 1.5 J AS C P T = 25 C 460 W D C T -55 ... +150 C J Features T 150 C JM T -55 ... +150 C stg Avalanche Rated T Maximum Lead Temperature for Soldering 300 C High Current Handling Capability L T Plastic Body for 10s 260 C Fast Intrinsic Rectifier SOLD Low R DS(on) F Mounting Force (TO-263) 10..65 / 2.2..14.6 N/lb C M Mounting Torque (TO-220, TO-3P & TO-247) 1.13/10 Nm/lb.in d Weight TO-263 2.5 g Advantages TO-220 3.0 g TO-3P 5.5 g Easy to Mount TO-247 6.0 g Space Savings High Power Density Symbol Test Conditions Characteristic Values (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J Applications BV V = 0V, I = 1mA 250 V DSS GS D DC-DC Converters V = 0V, I = 10mA 300 V GS D Battery Chargers V V = V , I = 250A 3.0 5.0 V GS(th) DS GS D Switch-Mode and Resonant-Mode Power Supplies I V = 20V, V = 0V 100 nA GSS GS DS DC Choppers I V = V , V = 0V 2 A DSS DS DSS GS AC Motor Drives T = 125C 200 A J Uninterruptible Power Supplies High Speed Power Switching R V = 10V, I = 0.5 I , Note 1 44 m DS(on) GS D D25 Applications 2015 IXYS CORPORATION, All Rights Reserved DS99663G(11/15) IXTA76N25T IXTP76N25T IXTQ76N25T IXTH76N25T Symbol Test Conditions Characteristic Values (T = 25 C Unless Otherwise Specified) Min. Typ. Max. J g V = 10V, I = 0.5 I , Note 1 43 72 S fs DS D D25 C 4920 pF iss C V = 0V, V = 25V, f = 1MHz 470 pF oss GS DS C 70 pF rss t 22 ns d(on) Resistive Switching Times t 25 ns r V = 15V, V = 0.5 V , I = 0.5 I GS DS DSS D D25 t 56 ns d(off) R = 3.3 (External) G t 29 ns f Q 92 nC g(on) Q V = 10V, V = 0.5 V , I = 25A 28 nC gs GS DS DSS D Q 21 nC gd R 0.27 C /W thJC R TO-220 0.50 C W thCH TO-3P & TO-247 0.25 C W Source-Drain Diode Symbol Test Conditions Characteristic Values (T = 25 C Unless Otherwise Specified) Min. Typ. Max. J I V = 0V 76 A S GS I Repetitive, Pulse Width Limited by T 200 A SM JM V I = I , V = 0V, Note 1 1.5 V SD F S GS t 148 ns rr I = 38A, -di/dt = 250A/ s F I 21 A RM V = 100V, V = 0V R GS Q 1.6 C RM Note 1: Pulse test, t 300s, duty cycle, d 2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or moreof the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537