Depletion Mode V = 500V IXTY08N50D2 DSX MOSFET I > 800mA IXTA08N50D2 D(on) R 4.6 IXTP08N50D2 DS(on) N-Channel TO-252 (IXTY) D G S G D (Tab) S TO-263 (IXTA) Symbol Test Conditions Maximum Ratings G V T = 25 C to 150 C 500 V S DSX J V Continuous 20 V D (Tab) GSX V Transient 30 V GSM TO-220 (IXTP) P T = 25 C60W D C - 55 ... +150 C T J T 150 C JM T - 55 ... +150 C stg Maximum Lead Temperature for Soldering 300 C T G L D D (Tab) S T Plastic Body for 10s 260 C SOLD M Mounting Torque (TO-220) 1.13 / 10 Nm/lb.in. d G = Gate D = Drain Weight TO-252 0.35 g S = Source Tab = Drain TO-263 2.50 g TO-220 3.00 g Features Normally ON Mode International Standard Packages Molding Epoxies Meet UL 94 V-0 Symbol Test Conditions Characteristic Values Flammability Classification (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J BV V = - 5V, I = 25A 500 V Advantages DSX GS D V V = 25V, I = 25 A - 2.5 - 4.5 V GS(off) DS D Easy to Mount Space Savings I V = 20V, V = 0V 50 nA GSX GS DS High Power Density I V = V , V = - 5V 1 A DSX(off) DS DSX GS T = 125C 10A Applications J R V = 0V, I = 400mA, Note 1 4.6 DS(on) GS D Audio Amplifiers Start-up Circuits I V = 0V, V = 25V, Note 1 800 mA D(on) GS DS Protection Circuits Ramp Generators Current Regulators Active Loads 2017 IXYS CORPORATION, All Rights Reserved DS100178E(9/17)IXTY08N50D2 IXTA08N50D2 IXTP08N50D2 Symbol Test Conditions Characteristic Values (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J g V = 30V, I = 400mA, Note 1 340 570 mS fs DS D C 312 pF iss C V = -10V, V = 25V, f = 1MHz 35 pF oss GS DS C 11 pF rss t 28 ns d(on) Resistive Switching Times t 54 ns r V = 5V, V = 250V, I = 400mA GS DS D t 35 ns d(off) R = 10 (External) G t 52 ns f Q 12.7 nC g(on) Q V = 5V, V = 250V, I = 400mA 1.2 nC gs GS DS D Q 7.3 nC gd R 2.08 C/W thJC R TO-220 0.50 C/W thCS Safe-Operating-Area Specification Characteristic Values Symbol Test Conditions Min. Typ. Max. SOA V = 400V, I = 90mA, T = 75 C, Tp = 5s 36 W DS D C Source-Drain Diode Symbol Test Conditions Characteristic Values (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J V I = 800mA, V = -10V, Note 1 0.8 1.3 V SD F GS t 400 ns rr I = 800mA, -di/dt = 100A/ s F I 5.2 A RM V = 100V, V = -10V R GS Q 1.04 C RM Note 1. Pulse test, t 300s, duty cycle, d 2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537