Preliminary Technical Information TM V = 600V XPT 600V IGBT IXXH100N60C3 CES TM I = 100A GenX3 C110 V 2.20V CE(sat) t = 75ns fi(typ) Extreme Light Punch Through IGBT for 20-60kHz Switching TO-247 AD Symbol Test Conditions Maximum Ratings V T = 25C to 175C 600 V CES J G V T = 25C to 175C, R = 1M 600 V CGR J GE C Tab E V Continuous 20 V GES V Transient 30 V GEM G = Gate C = Collector I T = 25C (Chip Capability) 190 A C25 C E = Emitter Tab = Collector I Terminal Current Limit 160 A LRMS I T = 110C 100 A C110 C I T = 25C, 1ms 380 A CM C I T = 25C 50 A A C Features E T = 25C 600 mJ AS C z Optimized for 20-60kHz Switching SSOA V = 15V, T = 150C, R = 2 I = 200 A GE VJ G CM z Square RBSOA (RBSOA) Clamped Inductive Load V V z CE CES Avalanche Rated z Short Circuit Capability t V = 15V, V = 360V, T = 150C 10 s sc GE CE J z High Current Handling Capability (SCSOA) R = 10, Non Repetitive G z International Standard Package P T = 25C 830 W C C T -55 ... +175 C J Advantages T 175 C JM T -55 ... +175 C z stg High Power Density z Low Gate Drive Requirement T Maximum Lead Temperature for Soldering 300 C L T 1.6 mm (0.062in.) from Case for 10s 260 C SOLD M Mounting Torque 1.13/10 Nm/lb.in. d Applications Weight 6g z Power Inverters z UPS z Motor Drives z Symbol Test Conditions Characteristic Values SMPS z (T = 25C, Unless Otherwise Specified) Min. Typ. Max. PFC Circuits J z Battery Chargers BV I = 250A, V = 0V 600 V CES C GE z Welding Machines z V I = 250A, V = V 3.0 5.5 V Lamp Ballasts GE(th) C CE GE I V = V , V = 0V 25 A CES CE CES GE T = 150C 2 mA J I V = 0V, V = 20V 100 nA GES CE GE V I = 70A, V = 15V, Note 1 1.68 2.20 V CE(sat) C GE T = 150C 1.97 V J 2013 IXYS CORPORATION, All Rights Reserved DS100282A(02/13)IXXH100N60C3 Symbol Test Conditions Characteristic Values TO-247 (IXXH) Outline (T = 25C Unless Otherwise Specified) Min. Typ. Max. J g I = 60A, V = 10V, Note 1 22 40 S C CE fs C 4810 pF ies C V = 25V, V = 0V, f = 1MHz 275 pF P oes CE GE 1 2 3 C 80 pF res Q 150 nC g(on) Q I = 70A, V = 15V, V = 0.5 V 34 nC ge C GE CE CES Q 60 nC gc t 30 ns e d(on) Inductive load, T = 25C t 70 ns Terminals: 1 - Gate 2 - Collector J ri 3 - Emitted I = 70A, V = 15V E 2.00 mJ C GE on Dim. Millimeter Inches V = 360V, R = 2 t 90 ns CE G d(off) Min. Max. Min. Max. t 75 ns Note 2 A 4.7 5.3 .185 .209 fi A 2.2 2.54 .087 .102 1 E 0.95 1.40 mJ f of A 2.2 2.6 .059 .098 2 b 1.0 1.4 .040 .055 t 30 ns d(on) b 1.65 2.13 .065 .084 1 Inductive load, T = 150C t 65 ns J ri b 2.87 3.12 .113 .123 2 I = 70A, V = 15V E 3.00 mJ C .4 .8 .016 .031 C GE on D 20.80 21.46 .819 .845 V = 360V, R = 2 t CE G 105 ns d(off) E 15.75 16.26 .610 .640 t Note 2 115 ns e 5.20 5.72 0.205 0.225 fi L 19.81 20.32 .780 .800 E 1.40 mJ off L1 4.50 .177 P 3.55 3.65 .140 .144 R 0.18 C/W thJC Q 5.89 6.40 0.232 0.252 R 0.15 C/W thCS R 4.32 5.49 .170 .216 S 6.15 BSC 242 BSC Notes: 1. Pulse test, t 300 s, duty cycle, d 2%. 2. Switching times & energy losses may increase for higher V (clamp), T or R . CE J G PRELIMANARY TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute aconsidered reflectio of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537