TM XPT 650V IGBT V = 650V IXXH110N65C4 CES TM GenX4 I = 110A C110 V 2.35V CE(sat) t = 35ns Extreme Light Punch Through fi(typ) IGBT for 20-60 kHz Switching Symbol Test Conditions Maximum Ratings TO-247 AD V T = 25C to 175C 650 V CES J V T = 25C to 175C, R = 1M 650 V CGR J GE V Continuous 20 V GES V Transient 30 V GEM G C Tab I T = 25C (Chip Capability) 235 A C25 C E I Terminal Current Limit 160 A LRMS I T = 110C 110 A C110 C G = Gate C = Collector I T = 25C, 1ms 600 A CM C E = Emitter Tab = Collector SSOA V = 15V, T = 150C, R = 2 I = 220 A GE VJ G CM (RBSOA) Clamped Inductive Load V V CE CES t V = 15V, V = 360V, T = 150C 10 s sc GE CE J Features (SCSOA) R = 10, Non Repetitive G P T = 25C 880 W Optimized for 20-60kHz Switching C C Square RBSOA T -55 ... +175 C J Avalanche Capability T 175 C JM Short Circuit Capability T -55 ... +175 C stg International Standard Package T Maximum Lead Temperature for Soldering 300 C L T 1.6 mm (0.062in.) from Case for 10s 260 C SOLD Advantages M Mounting Torque 1.13/10 Nm/lb.in. d High Power Density Weight 6g 175C Rated Extremely Rugged Low Gate Drive Requirement Symbol Test Conditions Characteristic Values (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J Applications BV I = 250 A, V = 0V 650 V CES C GE UPS V I = 4mA, V = V 4.0 6.5 V GE(th) C CE GE Motor Drives I V = V , V = 0V 10 A CES CE CES GE SMPS T = 150C 500 A J PFC Circuits I V = 0V, V = 20V 100 nA Battery Chargers GES CE GE Welding Machines V I = 110A, V = 15V, Note 1 2.06 2.35 V CE(sat) C GE Lamp Ballasts T = 150C 2.50 V J High Frequency Power Inverters 2016 IXYS CORPORATION, All Rights Reserved DS100497C(9/16)IXXH110N65C4 Symbol Test Conditions Characteristic Values TO-247 (IXXH) Outline (T = 25C Unless Otherwise Specified) Min. Typ. Max. J g I = 60A, V = 10V, Note 1 30 52 S fs C CE C 5500 pF ies C V = 25V, V = 0V, f = 1MHz 267 pF P oes CE GE 1 2 3 C 80 pF res Q 167 nC g(on) Q I = 110A, V = 15V, V = 0.5 V 44 nC ge C GE CE CES Q 63 nC gc t 30 ns e d(on) t 45 ns Inductive load, T = 25C Terminals: 1 - Gate 2 - Collector ri J 3 - Emitter E 2.50 mJ I = 55A, V = 15V on C GE Dim. Millimeter Inches t 110 ns V = 400V, R = 2 d(off) CE G Min. Max. Min. Max. t 35 ns fi A 4.7 5.3 .185 .209 Note 2 A 2.2 2.54 .087 .102 E 0.63 1.05 mJ 1 f of A 2.2 2.6 .059 .098 2 t 26 ns b 1.0 1.4 .040 .055 d(on) b 1.65 2.13 .065 .084 1 Inductive load, T = 150C t 45 ns J ri b 2.87 3.12 .113 .123 2 I = 55A, V = 15V E 3.55 mJ C .4 .8 .016 .031 C GE on D 20.80 21.46 .819 .845 V = 400V, R = 2 t 120 ns CE G d(off) E 15.75 16.26 .610 .640 t 40 ns Note 2 e 5.20 5.72 0.205 0.225 fi L 19.81 20.32 .780 .800 E 0.90 mJ off L1 4.50 .177 P 3.55 3.65 .140 .144 R 0.17 C/W thJC Q 5.89 6.40 0.232 0.252 R 0.21 C/W thCS R 4.32 5.49 .170 .216 S 6.15 BSC 242 BSC Notes: 1. Pulse test, t 300 s, duty cycle, d 2%. 2. Switching times & energy losses may increase for higher V (clamp), T or R . CE J G IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537