Advance Technical Information TM V = 650V XPT 650V IXXH140N65B4 CES TM I = 140A GenX4 C110 V 1.90V CE(sat) t = 44ns fi(typ) Extreme Light Punch Through IGBT for 10-30kHz Switching TO-247 Symbol Test Conditions Maximum Ratings V T = 25C to 175C 650 V CES J V T = 25C to 175C, R = 1M 650 V CGR J GE V Continuous 20 V GES G V Transient 30 V GEM G C Tab E I T = 25C (Chip Capability) 340 A C25 C I Terminal Current Limit 160 A LRMS I T = 110C 140 A G = Gate E = Emitter C110 C C = Collector Tab = Collector I T = 25C, 1ms 840 A CM C SSOA V = 15V, T = 150C, R = 4.7 I = 240 A GE VJ G CM (RBSOA) Clamped Inductive Load V V CE CES t V = 15V, V = 400V, T = 150C 10 s sc GE CE J (SCSOA) R = 10, Non Repetitive G Features P T = 25C 1200 W C C Optimized for 10-30kHz Switching T -55 ... +175 C J Square RBSOA T 175 C JM Short Circuit Capability T -55 ... +175 C High Current Handling Capability stg International Standard Package T Maximum Lead Temperature for Soldering 300 C L T 1.6 mm (0.062in.) from Case for 10s 260 C SOLD M Mounting Torque 1.13/10 Nm/lb.in. Advantages d Weight 6 g High Power Density Low Gate Drive Requirement Applications Symbol Test Conditions Characteristic Values Power Inverters (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. UPS J Motor Drives BV I = 250A, V = 0V 650 V CES C GE SMPS V I = 250A, V = V 4.0 6.5 V PFC Circuits GE(th) C CE GE Battery Chargers I V = V , V = 0V 10 A CES CE CES GE Welding Machines T = 150C 1 mA J Lamp Ballasts High Frequency Power Inverters I V = 0V, V = 20V 100 nA GES CE GE V I = 120A, V = 15V, Note 1 1.55 1.90 V CE(sat) C GE T = 150C 1.76 V J 2016 IXYS CORPORATION, All Rights Reserved DS100741(8/16)IXXH140N65B4 Symbol Test Conditions Characteristic Values TO-247 (IXXH) Outline (T = 25C Unless Otherwise Specified) Min. Typ. Max. J D A A B 0P 0K M D B M A2 E g I = 60A, V = 10V, Note 1 40 70 S fs C CE Q S D2 C 8000 pF R ies D1 D C V = 25V, V = 0V, f = 1MHz 378 pF oes CE GE 0P1 4 R1R1R1R1 C 107 pF 1 2 res 3 IXYS OPTION L1 Q 250 nC C g(on) E1 L Q I = 140A, V = 15V, V = 0.5 V 70 nC ge C GE CE CES Q 90 nC gc A1 b t 54 ns c b2 d(on) b4 1 - Gate Inductive load, T = 25C e t 105 ns J 2,4 - Collector ri J M C A M 3 - Emitter I = 100A, V = 15V E 5.75 mJ C GE on V = 400V, R = 4.7 t 270 ns CE G d(off) t 44 ns Note 2 fi E 2.67 mJ off t 43 ns d(on) Inductive load, T = 150C t J 85 ns ri I = 100A, V = 15V E C GE 6.80 mJ on V = 400V, R = 4.7 t 240 ns CE G d(off) t 100 ns Note 2 fi E 3.90 mJ off R 0.125 C/W thJC R 0.21 C/W thCS Notes: 1. Pulse test, t 300 s, duty cycle, d 2%. 2. Switching times & energy losses may increase for higher V (Clamp), T or R . CE J G ADVANCE TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experi- ence, and constitute aconsidered reflectio of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537