X-On Electronics has gained recognition as a prominent supplier of IXXH30N65B4D1 IGBT Transistors across the USA, India, Europe, Australia, and various other global locations. IXXH30N65B4D1 IGBT Transistors are a product manufactured by IXYS. We provide cost-effective solutions for IGBT Transistors, ensuring timely deliveries around the world.

IXXH30N65B4D1 IXYS

Name: IXXH30N65B4D1
Brand: IXYS
SKU: IXXH30N65B4D1_IXYS
Availability: OutOfStock
Rating: 5 (11 reviews)

IXXH30N65B4D1 electronic component of IXYS

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Part No.	IXXH30N65B4D1
Manufacturer:	IXYS
Category:	IGBT Transistors
Description:	Discrete Semiconductor Modules Disc IGBT XPT-GenX4 TO-247AD
Datasheet:	IXXH30N65B4D1 Datasheet (PDF)
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

1: USD 9.4171 ea
Line Total: USD 9.42

Availability - 0

MOQ: 1 Multiples: 1
Pack Size: 1

IXXH30N65B4D1 More Buying Options & Price Grid(s)

Availability	Price	Buy Price	Quantity
0 Ship by Mon. 02 Dec to Wed. 04 Dec MOQ : 1 Multiples : 1	1 : USD 9.4171 3 : USD 6.4047 7 : USD 6.0519

Specifications

Manufacturer IXYS IXYS
Product Category IGBT Transistors IGBT Transistors
RoHS - XON Y Y
Configuration Single Single
Package / Case TO - 247 - 3 TO - 247 - 3
Packaging Tube Tube
Mounting Style Through Hole Through Hole
Pd - Power Dissipation 230 W 230 W
Minimum Operating Temperature - 55 C - 55 C
Maximum Operating Temperature + 175 C + 175 C
Product Diode Power Modules Diode Power Modules
Type Genx4 Genx4
Brand Ixys Ixys
Transistor Polarity N - Channel N - Channel
Fall Time 50 ns 50 ns
Id - Continuous Drain Current 70 A 70 A
Product Type Discrete Semiconductor Modules Discrete Semiconductor Modules
Rise Time 65 ns 65 ns
Factory Pack Quantity : 30 30
Subcategory Discrete Semiconductor Modules Discrete Semiconductor Modules
Tradename Xpt Xpt
Typical Turn-Off Delay Time 150 ns 150 ns
Typical Turn-On Delay Time 20 ns 20 ns
Vds - Drain-Source Breakdown Voltage 650 V 650 V
Vgs - Gate-Source Voltage 20 V 20 V
Vgs Th - Gate-Source Threshold Voltage 4 V 4 V

We are delighted to provide the IXXH30N65B4D1 from our IGBT Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IXXH30N65B4D1 and other electronic components in the IGBT Transistors category and beyond.

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Additional Infomation About Product

The IXXH30N65B4D1 is a Discrete Semiconductor Module manufactured by IXYS. It is an Insulated Gate Bipolar Transistor (IGBT) part made to the TO-247AD package form. The XPT series GenX4 part has a voltage rating of 650 Volts and a current rating of 30 Amps. It has a short-circuit rated capability and is capable of forward blocking and reverse conducting. It is suitable for switching applications and is designed with low gate drive voltage. The part is also RoHS compliant.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

CLR may also be referenced as

IXS
IXYS
IXYS CORP
Ixys Corporation
IXYS INTEG.CIRCUITS DIV(CLARE)
IXYS Integrated Circuits
IXYS Integrated Circuits / Clare
IXYS Integrated Circuits Division
IXYS Integrated Circuits/Clare
IXYS RF
IXYS SEMICONDUCTOR
Littelfuse/IXYS

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