TM V = 600V XPT 600V IGBTs IXXA50N60B3 CES TM I = 50A GenX3 IXXP50N60B3 C110 V 1.80V IXXH50N60B3 CE(sat) TO-263 (IXXA) Extreme Light Punch Through IGBT for 5-30 kHz Switching G E C (Tab) TO-220 (IXXP) Symbol Test Conditions Maximum Ratings V T = 25C to 175C 600 V CES J V T = 25C to 175C, R = 1M 600 V CGR J GE V Continuous 20 V GES G V Transient 30 V GEM C C (Tab) E I T = 25C 120 A C25 C TO-247 (IXXH) I T = 110C 50 A C110 C I T = 25C, 1ms 200 A CM C I T = 25C 25 A A C E T = 25C 200 mJ AS C G C SSOA V = 15V, T = 150C, R = 5 I = 100 A GE VJ G CM E C (Tab) (RBSOA) Clamped Inductive Load V V CE CES G = Gate C = Collector t V = 15V, V = 360V, T = 150C 10 s E = Emitter Tab = Collector sc GE CE J (SCSOA) R = 22, Non Repetitive G Features P T = 25C 600 W C C T -55 ... +175 C J Optimized for 5-30kHz Switching T 175 C JM Square RBSOA T -55 ... +175 C stg Avalanche Capability Short Circuit Capability T Maximum Lead Temperature for Soldering 300 C L International Standard Packages T 1.6 mm (0.062in.) from Case for 10s 260 C SOLD F Mounting Force (TO-263) 10..65 / 2.2..14.6 N/lb. C Advantages M Mounting Torque (TO-220 & TO-247) 1.13 / 10 Nm/lb.in. d High Power Density Weight TO-263 2.5 g 175C Rated TO-220 3.0 g TO-247 6.0 g Extremely Rugged Low Gate Drive Requirement Easy to Parallel Symbol Test Conditions Characteristic Values (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J Applications BV I = 250 A, V = 0V 600 V CES C GE Power Inverters V I = 250 A, V = V 3.5 6.0 V GE(th) C CE GE UPS Motor Drives I V = V , V = 0V 25 A CES CE CES GE SMPS T = 150C 2 mA J PFC Circuits I V = 0V, V = 20V 100 nA GES CE GE Battery Chargers V I = 36A, V = 15V, Note 1 1.55 1.80 V Welding Machines CE(sat) C GE T = 150C 1.80 V Lamp Ballasts J 2013 IXYS CORPORATION, All Rights Reserved DS100301C(8/13) IXXA50N60B3 IXXP50N60B3 IXXH50N60B3 Symbol Test Conditions Characteristic Values TO-220 Outline (T = 25C Unless Otherwise Specified) Min. Typ. Max. J g I = 36A, V = 10V, Note 1 12 19 S fs C CE C 2230 pF ies C V = 25V, V = 0V, f = 1MHz 195 pF oes CE GE C 44 pF res Q 70 nC g(on) Q I = 36A, V = 15V, V = 0.5 V 16 nC ge C GE CE CES Q 29 nC gc t 27 ns d(on) Pins: 1 - Gate t 40 ns Inductive load, T = 25C 2 - Collector ri J 3 - Emitter E 0.67 mJ I = 36A, V = 15V on C GE t 100 150 ns V = 360V, R = 5 d(off) CE G t 135 ns fi Note 2 E 0.74 1.20 mJ f of t 30 ns d(on) Inductive load, T = 150C t 45 ns J ri I = 36A, V = 15V E 1.40 mJ C GE on V = 360V, R = 5 t 130 ns CE G d(off) t 190 ns Note 2 fi E 1.20 mJ off R 0.25 C/W thJC R TO-247 0.21 C/W thCS TO-247 Outline TO-220 0.50 C/W Notes: 1. Pulse test, t 300 s, duty cycle, d 2%. 2. Switching times & energy losses may increase for higher V (clamp), T or R . CE J G 1 - Gate 2,4 - Collector 3 - Emitter TO-263 Outline 1 = Gate 2,4 = Collector 3 = Emitter IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537