TM V = 600V XPT 600V IGBT IXXH50N60B3D1 CES TM I = 50A GenX3 w/ Diode C110 V 1.80V CE(sat) t = 135ns fi(typ) Extreme Light Punch Through IGBT for 5-30kHz Switching TO-247 Symbol Test Conditions Maximum Ratings V T = 25C to 175C 600 V CES J V T = 25C to 175C, R = 1M 600 V CGR J GE G V Continuous 20 V GES C Tab E V Transient 30 V GEM I T = 25C( Chip Capability) 120 A C25 C G = Gate C = Collector I T = 110C 50 A C110 C E = Emitter Tab = Collector I T = 110C 30 A F110 C I T = 25C, 1ms 200 A CM C I T = 25C 25 A A C E T = 25C 200 mJ AS C Features SSOA V = 15V, T = 150C, R = 5 I = 100 A GE VJ G CM (RBSOA) Clamped Inductive Load V V CE CES Optimized for 5-30kHz Switching t V = 15V, V = 360V, T = 150C 10 s Square RBSOA sc GE CE J Anti-Parallel Ultra Fast Diode (SCSOA) R = 22, Non Repetitive G Avalanche Capability P T = 25C 600 W C C Short Circuit Capability T -55 ... +175 C International Standard Package J T 175 C JM T -55 ... +175 C stg Advantages T Maximum Lead Temperature for Soldering 300 C L T 1.6 mm (0.062in.) from Case for 10s 260 C High Power Density SOLD 175C Rated M Mounting Torque 1.13/10 Nm/lb.in. d Extremely Rugged Weight 6g Low Gate Drive Requirement Applications Symbol Test Conditions Characteristic Values Power Inverters (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J UPS BV I = 250 A, V = 0V 600 V CES C GE Motor Drives V I = 250 A, V = V 3.5 6.0 V SMPS GE(th) C CE GE PFC Circuits I V = V , V = 0V 25 A CES CE CES GE Battery Chargers T = 150C 3 mA J Welding Machines I V = 0V, V = 20V 100 nA Lamp Ballasts GES CE GE V I = 36A, V = 15V, Note 1 1.55 1.80 V CE(sat) C GE T = 150C 1.80 V J 2013 IXYS CORPORATION, All Rights Reserved DS100302B(8/13)IXXH50N60B3D1 Symbol Test Conditions Characteristic Values TO-247 (IXXH) Outline (T = 25C Unless Otherwise Specified) Min. Typ. Max. J g I = 36A, V = 10V, Note 1 12 19 S fs C CE C 2230 pF ies C V = 25V, V = 0V, f = 1MHz 195 pF oes CE GE C 44 pF res Q 70 nC g(on) Q I = 36A, V = 15V, V = 0.5 V 16 nC ge C GE CE CES Q 29 nC gc t 27 ns d(on) 1 - Gate 2,4 - Collector t 40 ns Inductive load, T = 25C ri J 3 - Emitter E 0.67 mJ I = 36A, V = 15V on C GE t 100 150 ns V = 360V, R = 5 d(off) CE G t 135 ns fi Note 2 E 0.74 1.20 mJ f of t 30 ns d(on) Inductive load, T = 150C t 45 ns J ri I = 36A, V = 15V E 1.40 mJ C GE on V = 360V, R = 5 t 130 ns CE G d(off) t 190 ns Note 2 fi E 1.20 mJ off R 0.25 C/W thJC R 0.21 C/W thCS Reverse Diode (FRED) Symbol Test Conditions Characteristic Values (T = 25C Unless Otherwise Specified) Min. Typ. Max. J V I = 30A, V = 0V, Note 1 2.7 V F F GE T = 150C 1.6 V J I TI = 30A, V = 0V, -di /dt = 100A/s, = 100C 4 A RM F GE F J t T = 100C 100 ns V = 100V rr J R 25 ns I = 1A, V = 0V, -di /dt = 100A/s, V = 30V F GE F R R 0.9 C/W thJC Notes: 1. Pulse test, t 300 s, duty cycle, d 2%. 2. Switching times & energy losses may increase for higher V (clamp), T or R . CE J G IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537