Preliminary Technical Information TM V = 600V XPT 600V IXXH50N60C3 CES TM I = 50A GenX3 C110 V 2.30V CE(sat) t = 42ns fi(typ) Extreme Light Punch Through IGBT for 20-60 kHz Switching TO-247 AD Symbol Test Conditions Maximum Ratings V T = 25C to 175C 600 V CES J V T = 25C to 175C, R = 1M 600 V CGR J GE G V Continuous 20 V GES C Tab E V Transient 30 V GEM I T = 25C 100 A C25 C G = Gate C = Collector I T = 110C 50 A C110 C E = Emitter Tab = Collector I T = 25C, 1ms 200 A CM C I T = 25C 25 A A C E T = 25C 200 mJ AS C SSOA V = 15V, T = 150C, R = 5 I = 100 A GE VJ G CM Features (RBSOA) Clamped Inductive Load V V CE CES z t V = 15V, V = 360V, T = 150C 10 s sc GE CE J Optimized for 20-60kHz Switching z (SCSOA) R = 22, Non Repetitive Square RBSOA G z Avalanche Capability P T = 25C 600 W C C z Short Circuit Capability T -55 ... +175 C z J International Standard Package T 175 C JM T -55 ... +175 C stg Advantages T Maximum Lead Temperature for Soldering 300 C L z High Power Density T 1.6 mm (0.062in.) from Case for 10s 260 C SOLD z 175C Rated M Mounting Torque 1.13/10 Nm/lb.in. d z Extremely Rugged Weight 6g z Low Gate Drive Requirement z Easy to Parallel Applications Symbol Test Conditions Characteristic Values (T = 25C, Unless Otherwise Specified Min. Typ. Max. J z Power Inverters z BV I = 250A, V = 0V 600 V UPS CES C GE z Motor Drives V I = 250A, V = V 3.0 5.5 V GE(th) C CE GE z SMPS I V = V , V = 0V 25 A z CES CE CES GE PFC Circuits T = 150C 2 mA z J Battery Chargers z Welding Machines I V = 0V, V = 20V 100 nA GES CE GE z Lamp Ballasts V I = 36A, V = 15V, Note 1 1.95 2.30 V CE(sat) C GE T = 150C 2.45 V J 2013 IXYS CORPORATION, All Rights Reserved DS100265A(02/13)IXXH50N60C3 Symbol Test Conditions Characteristic Values TO-247 (IXXH) Outline (T = 25C Unless Otherwise Specified) Min. Typ. Max. J g I = 36A, V = 10V, Note 1 11 18 S C CE fs C 2320 pF ies C V = 25V, V = 0V, f = 1MHz 138 pF P oes CE GE 1 2 3 C 42 pF res Q 64 nC g Q I = 36A, V = 15V, V = 0.5 V 18 nC ge C GE CE CES Q 25 nC gc t 24 ns e d(on) t Inductive load, T = 25C 40 ns Terminals: 1 - Gate 2 - Collector ri J 3 - Emitted E I = 36A, V = 15V 0.72 mJ on C GE Dim. Millimeter Inches t V = 360V, R = 5 62 100 ns d(off) CE G Min. Max. Min. Max. t 42 ns A 4.7 5.3 .185 .209 fi Note 2 A 2.2 2.54 .087 .102 1 E 0.33 0.55 mJ f of A 2.2 2.6 .059 .098 2 b 1.0 1.4 .040 .055 t 25 ns d(on) b 1.65 2.13 .065 .084 1 Inductive load, T = 150C t 44 ns J ri b 2.87 3.12 .113 .123 2 I = 36A, V = 15V E 1.46 mJ C .4 .8 .016 .031 C GE on D 20.80 21.46 .819 .845 V = 360V, R = 5 t CE G 80 ns d(off) E 15.75 16.26 .610 .640 t Note 2 90 ns e 5.20 5.72 0.205 0.225 fi L 19.81 20.32 .780 .800 E 0.48 mJ off L1 4.50 .177 P 3.55 3.65 .140 .144 R 0.25 C/W thJC Q 5.89 6.40 0.232 0.252 R 0.21 C/W thCS R 4.32 5.49 .170 .216 S 6.15 BSC 242 BSC Notes: 1. Pulse test, t 300 s, duty cycle, d 2%. 2. Switching times & energy losses may increase for higher V (clamp), T or R . CE J G PRELIMANARY TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute aconsidered reflectio of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537