TM XPT 650V IGBT V = 650V IXXH60N65B4H1 CES TM GenX4 w/ Sonic Diode I = 60A C110 V 2.2V CE(sat) t = 43ns fi(typ) Extreme Light Punch Through IGBT for 5-30 kHz Switching TO-247 Symbol Test Conditions Maximum Ratings V T = 25C to 175C 650 V CES J V T = 25C to 175C, R = 1M 650 V G CGR J GE C Tab E V Continuous 20 V GES V Transient 30 V GEM G = Gate C = Collector I T = 25C (Chip Capability) 145 A C25 C E = Emitter Tab = Collector I T = 110C 60 A C110 C I T = 110C 47 A F110 C I T = 25C, 1ms 265 A CM C SSOA V = 15V, T = 150C, R = 5 I = 120 A GE VJ G CM Features (RBSOA) Clamped Inductive Load V V CE CES t V = 15V, V = 360V, T = 150C 10 s sc GE CE J Optimized for 5-30kHz Switching (SCSOA) R = 82, Non Repetitive Square RBSOA G Anti-Parallel Sonic Diode P T = 25C 536 W C C Short Circuit Capability T -55 ... +175 C International Standard Package J T 175 C JM T -55 ... +175 C stg Advantages T Maximum Lead Temperature for Soldering 300 C L High Power Density T 1.6 mm (0.062in.) from Case for 10s 260 C SOLD Extremely Rugged M Mounting Torque 1.13/10 Nm/lb.in d Low Gate Drive Requirement Weight 6g Applications Power Inverters UPS Motor Drives Symbol Test Conditions Characteristic Values SMPS (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J PFC Circuits BV I = 250 A, V = 0V 650 V CES C GE Battery Chargers V I = 250 A, V = V 4.0 6.5 V Welding Machines GE(th) C CE GE Lamp Ballasts I V = V , V = 0V 25 A CES CE CES GE T = 150C 3 mA J I V = 0V, V = 20V 100 nA GES CE GE V I = 60A, V = 15V, Note 1 1.8 2.2 V CE(sat) C GE T = 150C 2.1 V J 2016 IXYS CORPORATION, All Rights Reserved DS100494D(9/16)IXXH60N65B4H1 Symbol Test Conditions Characteristic Values TO-247 (IXXH) Outline (T = 25C Unless Otherwise Specified) Min. Typ. Max. J D A A B 0P 0K M D B M A2 E g I = 60A, V = 10V, Note 1 17 28 S fs C CE Q S D2 R C 2590 pF ies D1 D C V = 25V, V = 0V, f = 1MHz 310 pF 0P1 oes CE GE 4 R1R1R1R1 C 40 pF 1 2 3 res IXYS OPTION L1 C Q 86 nC g(on) E1 L Q I = 60A, V = 15V, V = 0.5 V 22 nC ge C GE CE CES Q 35 nC gc A1 b c b2 t 19 ns b4 d(on) 1 - Gate e 2,4 - Collector t 80 ns Inductive load, T = 25C J M C A M ri J 3 - Emitter E 3.2 mJ I = 60A, V = 15V on C GE t 107 ns V = 400V, R = 5 d(off) CE G t 43 ns fi Note 2 E 1.1 mJ f of t 20 ns d(on) Inductive load, T = 150C t 74 ns J ri I = 60A, V = 15V E 4.2 mJ C GE on V = 400V, R = 5 t 120 ns CE G d(off) t 88 ns Note 2 fi E 1.8 mJ off R 0.28 C/W thJC R 0.21 C/W thCS Reverse Sonic Diode (FRD) Symbol Test Conditions Characteristic Values (T = 25C Unless Otherwise Specified) Min. Typ. Max. J V I = 30A, V = 0V, Note 1 2.5 V F F GE T = 150C 1.5 V J I T = 150C 25 A RM I = 30A, V = 0V, J F GE t T = 150C 78 ns rr J -di /dt = 900A/s, V = 300V F R R 0.60 C/W thJC Notes: 1. Pulse test, t 300 s, duty cycle, d 2%. 2. Switching times & energy losses may increase for higher V (clamp), T or R . CE J G IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537