TM XPT 650V IGBT V = 650V IXXH60N65C4 CES TM GenX4 I = 60A C110 V 2.4V CE(sat) t = 42ns Extreme Light Punch Through fi(typ) IGBT for 20-60 kHz Switching TO-247 Symbol Test Conditions Maximum Ratings V T = 25C to 175C 650 V CES J V T = 25C to 175C, R = 1M 650 V CGR J GE V Continuous 20 V GES G V Transient 30 V C Tab GEM E I T = 25C (Chip Capability) 135 A C25 C I T = 110C 60 A C110 C G = Gate C = Collector I T = 25C, 1ms 260 A CM C E = Emitter Tab = Collector SSOA V = 15V, T = 150C, R = 5 I = 120 A GE VJ G CM (RBSOA) Clamped Inductive Load V V CE CES t V = 15V, V = 360V, T = 150C 10 s sc GE CE J (SCSOA) R = 82, Non Repetitive Features G P T = 25C 536 W C C Optimized for 20-60kHz Switching T -55 ... +175 C J Square RBSOA T 175 C Short Circuit Capability JM T -55 ... +175 C International Standard Package stg T Maximum Lead Temperature for Soldering 300 C L T 1.6 mm (0.062in.) from Case for 10s 260 C SOLD Advantages M Mounting Torque 1.13/10 Nm/lb.in d High Power Density Weight 6g 175C Rated Extremely Rugged Low Gate Drive Requirement Applications Symbol Test Conditions Characteristic Values (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J Power Inverters BV I = 250 A, V = 0V 650 V UPS CES C GE Motor Drives V I = 250 A, V = V 4.0 6.5 V GE(th) C CE GE SMPS I V = V , V = 0V 10 A CES CE CES GE PFC Circuits T = 150C 300 A Battery Chargers J Welding Machines I V = 0V, V = 20V 100 nA GES CE GE Lamp Ballasts V I = 60A, V = 15V, Note 1 1.9 2.4 V CE(sat) C GE High Frequency Power Inverters T = 150C 2.3 V J 2016 IXYS CORPORATION, All Rights Reserved DS100493C(9/16)IXXH60N65C4 Symbol Test Conditions Characteristic Values TO-247 (IXXH) Outline (T = 25C Unless Otherwise Specified) Min. Typ. Max. J D A A B 0P 0K M D B M A2 E g I = 60A, V = 10V, Note 1 18 30 S fs C CE Q S D2 R C 2590 pF ies D1 D C V = 25V, V = 0V, f = 1MHz 132 pF 0P1 oes CE GE 4 R1R1R1R1 C 40 pF 1 2 3 res IXYS OPTION L1 C Q 86 nC g(on) E1 L Q I = 60A, V = 15V, V = 0.5 V 19 nC ge C GE CE CES Q 40 nC gc A1 b c b2 t 19 ns b4 d(on) 1 - Gate e 2,4 - Collector t 80 ns Inductive load, T = 25C J M C A M ri J 3 - Emitter E 3.2 mJ I = 60A, V = 15V on C GE t 106 ns V = 400V, R = 5 d(off) CE G t 42 ns fi Note 2 E 1.0 mJ f of t 20 ns d(on) Inductive load, T = 150C t 90 ns J ri I = 60A, V = 15V E 4.2 mJ C GE on V = 400V, R = 5 t 110 ns CE G d(off) t 54 ns Note 2 fi E 1.5 mJ off R 0.28 C/W thJC R 0.21 C/W thCS Notes: 1. Pulse test, t 300 s, duty cycle, d 2%. 2. Switching times & energy losses may increase for higher V (clamp), T or R . CE J G IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537