X-On Electronics has gained recognition as a prominent supplier of IXXH75N60C3 IGBT Transistors across the USA, India, Europe, Australia, and various other global locations. IXXH75N60C3 IGBT Transistors are a product manufactured by IXYS. We provide cost-effective solutions for IGBT Transistors, ensuring timely deliveries around the world.

IXXH75N60C3 IXYS

IXXH75N60C3 electronic component of IXYS
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Part No.IXXH75N60C3
Manufacturer: IXYS
Category: IGBT Transistors
Description: IGBT Transistors XPT 600V IGBT GenX3 Power Device
Datasheet: IXXH75N60C3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 17.3279 ea
Line Total: USD 17.33 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Mon. 02 Dec to Wed. 04 Dec
MOQ : 1
Multiples : 1
1 : USD 17.3279
2 : USD 11.7645
4 : USD 11.1267

   
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We are delighted to provide the IXXH75N60C3 from our IGBT Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IXXH75N60C3 and other electronic components in the IGBT Transistors category and beyond.

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The IXXH75N60C3 with IGBT Transistors XPT 600V IGBT GenX3 Power Device is a three-terminal insulated gate bipolar transistor (IGBT) manufactured by IXYS. It is created using our state-of-the-art techonology and Optimized Gate Drive (OGD) technology which enhances the switching properties of the IGBT, making it more efficient and able to effectively handle higher currents and voltage levels. It has a maximum operating temperature of 175°C, providing superior heat management. The device can switch up to a frequency of 1600 Hz and is Insulated Gate Bipolar Transistor rated up to 600V. Additionally, it features efficient parallel connection, soft connection and outstanding short circuit capability. It is an ideal choice when it comes to high power applications, from renewable energy sources to motor drives and industrial process control.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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