TM XPT 650V IGBT V = 650V IXXH80N65B4 CES TM GenX4 I = 80A C110 V 2.1V CE(sat) t = 53ns fi(typ) Extreme Light Punch Through IGBT for 5-30 kHz Switching TO-247 AD Symbol Test Conditions Maximum Ratings G V T = 25C to 175C 650 V CES J C Tab E V T = 25C to 175C, R = 1M 650 V CGR J GE V Continuous 20 V GES G = Gate C = Collector V Transient 30 V GEM E = Emitter Tab = Collector I T = 25C (Chip Capability) 160 A C25 C I T = 110C 80 A C110 C I T = 25C, 1ms 430 A CM C SSOA V = 15V, T = 150C, R = 3 I = 160 A GE VJ G CM Features (RBSOA) Clamped Inductive Load V V CE CES Optimized for 5-30kHz Switching t V = 15V, V = 360V, T = 150C 10 s sc GE CE J Square RBSOA (SCSOA) R = 82, Non Repetitive G Short Circuit Capability P T = 25C 625 W International Standard Package C C T -55 ... +175 C J T 175 C Advantages JM T -55 ... +175 C stg High Power Density T Maximum Lead Temperature for Soldering 300 C L Extremely Rugged T 1.6 mm (0.062in.) from Case for 10s 260 C SOLD Low Gate Drive Requirement M Mounting Torque 1.13/10 Nm/lb.in. d Weight 6g Applications Power Inverters UPS Motor Drives SMPS Symbol Test Conditions Characteristic Values (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. PFC Circuits J Battery Chargers BV I = 250 A, V = 0V 650 V CES C GE Welding Machines V I = 250 A, V = V 4.0 6.5 V Lamp Ballasts GE(th) C CE GE I V = V , V = 0V 10 A CES CE CES GE T = 150C 500 A J I V = 0V, V = 20V 100 nA GES CE GE V I = 80A, V = 15V, Note 1 1.65 2.10 V CE(sat) C GE T = 150C 2.00 V J 2016 IXYS CORPORATION, All Rights Reserved DS100527B(9/16)IXXH80N65B4 Symbol Test Conditions Characteristic Values TO-247 (IXXH) Outline (T = 25C Unless Otherwise Specified) Min. Typ. Max. J g I = 60A, V = 10V, Note 1 25 42 S fs C CE C 3860 pF ies C V = 25V, V = 0V, f = 1MHz 196 pF oes CE GE C 58 pF res Q 120 nC g(on) Q I = 80A, V = 15V, V = 0.5 V 32 nC ge C GE CE CES Q 46 nC gc t 26 ns d(on) 1 - Gate t 100 ns Inductive load, T = 25C 2,4 - Collector ri J 3 - Emitter E 3.36 mJ I = 80A, V = 15V on C GE t 112 ns V = 400V, R = 3 d(off) CE G t 53 ns fi Note 2 E 1.83 mJ f of t 23 ns d(on) Inductive load, T = 150C t 102 ns J ri I = 80A, V = 15V E 5.50 mJ C GE on V = 400V, R = 3 t 128 ns CE G d(off) t 94 ns Note 2 fi E 2.70 mJ off R 0.24 C/W thJC R 0.21 C/W thCS Notes: 1. Pulse test, t 300 s, duty cycle, d 2%. 2. Switching times & energy losses may increase for higher V (clamp), T or R . CE J G IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537