X-On Electronics has gained recognition as a prominent supplier of IXXH80N65B4D1 IGBT Transistors across the USA, India, Europe, Australia, and various other global locations. IXXH80N65B4D1 IGBT Transistors are a product manufactured by IXYS. We provide cost-effective solutions for IGBT Transistors, ensuring timely deliveries around the world.

IXXH80N65B4D1 IXYS

Name: IXXH80N65B4D1
Brand: IXYS
SKU: IXXH80N65B4D1_IXYS
Availability: OutOfStock
Rating: 5 (11 reviews)

IXXH80N65B4D1 electronic component of IXYS

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See Product Specifications

Part No.	IXXH80N65B4D1
Manufacturer:	IXYS
Category:	IGBT Transistors
Description:	Discrete Semiconductor Modules Disc IGBT XPT-GenX4 TO-247AD
Datasheet:	IXXH80N65B4D1 Datasheet (PDF)
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

1: USD 16.1609 ea
Line Total: USD 16.16

Availability - 0

MOQ: 1 Multiples: 1
Pack Size: 1

IXXH80N65B4D1 More Buying Options & Price Grid(s)

Availability	Price	Buy Price	Quantity
0 Ship by Mon. 02 Dec to Wed. 04 Dec MOQ : 1 Multiples : 1	1 : USD 16.1609 2 : USD 10.9233 4 : USD 10.3262

Specifications

Manufacturer IXYS IXYS
Product Category IGBT Transistors IGBT Transistors
RoHS - XON Y Y
Configuration Single Single
Package / Case TO - 247 - 3 TO - 247 - 3
Packaging Tube Tube
Mounting Style Through Hole Through Hole
Pd - Power Dissipation 625 W 625 W
Minimum Operating Temperature - 55 C - 55 C
Maximum Operating Temperature + 175 C + 175 C
Product Diode Power Modules Diode Power Modules
Type Genx4 Genx4
Brand Ixys Ixys
Transistor Polarity N - Channel N - Channel
Fall Time 53 ns 53 ns
Id - Continuous Drain Current 180 A 180 A
Product Type Discrete Semiconductor Modules Discrete Semiconductor Modules
Rise Time 100 ns 100 ns
Factory Pack Quantity : 30 30
Subcategory Discrete Semiconductor Modules Discrete Semiconductor Modules
Tradename Xpt Xpt
Typical Turn-Off Delay Time 112 ns 112 ns
Typical Turn-On Delay Time 26 ns 26 ns
Vds - Drain-Source Breakdown Voltage 650 V 650 V
Vgs - Gate-Source Voltage 20 V 20 V
Vgs Th - Gate-Source Threshold Voltage 4 V 4 V

We are delighted to provide the IXXH80N65B4D1 from our IGBT Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IXXH80N65B4D1 and other electronic components in the IGBT Transistors category and beyond.

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Additional Infomation About Product

The IXXH80N65B4D1 is a Discrete Semiconductor Module manufactured by IXYS. It is an Insulated Gate Bipolar Transistor (IGBT) XPT-GenX4, with a maximum voltage rating of 800V and a maximum continuous current rating of 40A. The module has a TO-247AD package and is designed for use in high-efficiency power supply and motor control applications. It has an embedded anti-parallel diode and fast, rugged switching ability. The product is RoHS compliant and is UL certified.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

CLR may also be referenced as

IXS
IXYS
IXYS CORP
Ixys Corporation
IXYS INTEG.CIRCUITS DIV(CLARE)
IXYS Integrated Circuits
IXYS Integrated Circuits / Clare
IXYS Integrated Circuits Division
IXYS Integrated Circuits/Clare
IXYS RF
IXYS SEMICONDUCTOR
Littelfuse/IXYS

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