TM XPT 650V IGBT V = 650V IXXH80N65B4H1 CES TM GenX4 w/ Sonic I = 80A C110 Diode V 2.1V CE(sat) t = 52ns fi(typ) Extreme Light Punch Through IGBT for 5-30 kHz Switching TO-247 AD Symbol Test Conditions Maximum Ratings V T = 25C to 175C 650 V CES J V T = 25C to 175C, R = 1M 650 V CGR J GE G V Continuous 20 V GES C Tab E V Transient 30 V GEM I T = 25C (Chip Capability) 160 A C25 C G = Gate C = Collector I T = 110C 80 A C110 C E = Emitter Tab = Collector I T = 110C 62 A F110 C I T = 25C, 1ms 430 A CM C SSOA V = 15V, T = 150C, R = 3 I = 160 A GE VJ G CM (RBSOA) Clamped Inductive Load V V CE CES Features t V = 15V, V = 360V, T = 150C 10 s sc GE CE J (SCSOA) R = 82, Non Repetitive G Optimized for 5-30kHz Switching Square RBSOA P T = 25C 625 W C C Anti-Parallel Sonic Diode T -55 ... +175 C J Short Circuit Capability T 175 C International Standard Package JM T -55 ... +175 C stg T Maximum Lead Temperature for Soldering 300 C L Advantages T 1.6 mm (0.062in.) from Case for 10s 260 C SOLD High Power Density M Mounting Torque 1.13/10 Nm/lb.in. d Extremely Rugged Weight 6g Low Gate Drive Requirement Applications Power Inverters UPS Motor Drives Symbol Test Conditions Characteristic Values SMPS (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J PFC Circuits BV I = 250 A, V = 0V 650 V CES C GE Battery Chargers V I = 250 A, V = V 4.0 6.5 V Welding Machines GE(th) C CE GE Lamp Ballasts I V = V , V = 0V 50 A CES CE CES GE T = 150C 4 mA J I V = 0V, V = 20V 100 nA GES CE GE V I = 80A, V = 15V, Note 1 1.65 2.10 V CE(sat) C GE T = 150C 2.00 V J 2016 IXYS CORPORATION, All Rights Reserved DS100528C(9/16)IXXH80N65B4H1 Symbol Test Conditions Characteristic Values TO-247 (IXXH) Outline (T = 25C Unless Otherwise Specified) Min. Typ. Max. J g I = 60A, V = 10V, Note 1 25 42 S fs C CE C 3860 pF ies C V = 25V, V = 0V, f = 1MHz 395 pF oes CE GE C 58 pF res Q 120 nC g(on) Q I = 80A, V = 15V, V = 0.5 V 32 nC ge C GE CE CES Q 46 nC gc t 26 ns d(on) 1 - Gate t 103 ns Inductive load, T = 25C 2,4 - Collector ri J 3 - Emitter E 4.0 mJ I = 80A, V = 15V on C GE t 122 ns V = 400V, R = 3 d(off) CE G t 52 ns fi Note 2 E 2.1 mJ f of t 23 ns d(on) Inductive load, T = 150C t 100 ns J ri I = 80A, V = 15V E 5.2 mJ C GE on V = 400V, R = 3 t 145 ns CE G d(off) t 102 ns Note 2 fi E 3.1 mJ off R 0.24 C/W thJC R 0.21 C/W thCS Reverse Sonic Diode (FRD) Symbol Test Conditions Characteristic Values (T = 25C Unless Otherwise Specified) Min. Typ. Max. J V I = 50A, V = 0V, Note 1 2.5 V F F GE T = 150C 1.8 V J I T = 150C 45 A RM I = 50A, V = 0V, -di /dt = 900A/s, J F GE F t T = 150C 150 ns rr V = 300V J R R 0.45 C/W thJC Notes: 1. Pulse test, t 300 s, duty cycle, d 2%. 2. Switching times & energy losses may increase for higher V (clamp), T or R . CE J G IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537