TM V = 600V XPT 600V IGBTs IXXK100N60C3H1 CES TM I = 100A GenX3 w/ Diode IXXX100N60C3H1 C90 V 2.20V CE(sat) t = 75ns fi(typ) Extreme Light Punch Through IGBT for 20-60kHz Switching TO-264 (IXXK) Symbol Test Conditions Maximum Ratings G V T = 25C to 150C 600 V CES J C V T = 25C to 150C, R = 1M 600 V E CGR J GE Tab V Continuous 20 V GES V Transient 30 V GEM PLUS247 (IXXX) I T = 25C (Chip Capability) 170 A C25 C I Terminal Current Limit 120 A LRMS I T = 90C 100 A C90 C I T = 110C 65 A F110 C I T = 25C, 1ms 340 A CM C G G C Tab I T = 25C 50 A E A C E T = 25C 600 mJ AS C G = Gate E = Emitter SSOA V = 15V, T = 150C, R = 2 I = 200 A GE VJ G CM C = Collector Tab = Collector (RBSOA) Clamped Inductive Load V V CE CES t V = 15V, V = 360V, T = 150C 10 s sc GE CE J Features (SCSOA) R = 10, Non Repetitive G z P T = 25C 695 W International Standard Packages C C z Optimized for 20-60kHz Switching T -55 ... +150 C J z Square RBSOA T 150 C JM z Avalanche Rated T -55 ... +150 C z stg Short Circuit Capability z T Maximum Lead Temperature for Soldering 300 C Anti-Parallel Ultra Fast Diode L z High Current Handling Capability T 1.6 mm (0.062in.) from Case for 10s 260 C SOLD M Mounting Torque (TO-264) 1.13/10 Nm/lb.in. d F Mounting Force (PLUS247) 20..120 /4.5..27 N/lb. Advantages C Weight TO-264 10 g z High Power Density PLUS247 6 g z Low Gate Drive Requirement Symbol Test Conditions Characteristic Values Applications (T = 25C, Unless Otherwise Specified) Min. Typ. Max. J z BV I = 250A, V = 0V 600 V Power Inverters CES C GE z UPS V I = 250A, V = V 3.0 5.5 V GE(th) C CE GE z Motor Drives z SMPS I V = V , V = 0V 50 A CES CE CES GE z PFC Circuits T = 125C 4 mA J z Battery Chargers z I V = 0V, V = 20V 100 nA Welding Machines GES CE GE z Lamp Ballasts V I = 70A, V = 15V, Note 1 1.68 2.20 V CE(sat) C GE T = 150C 1.97 V J 2013 IXYS CORPORATION, All Rights Reserved DS100283B(02/13)IXXK100N60C3H1 IXXX100N60C3H1 Symbol Test Conditions Characteristic Values TO-264 Outline (T = 25C Unless Otherwise Specified) Min. Typ. Max. J g I = 60A, V = 10V, Note 1 22 40 S fs C CE C 4810 pF ies C V = 25V, V = 0V, f = 1MHz 455 pF oes CE GE C 80 pF res Q 150 nC g(on) Q I = 70A, V = 15V, V = 0.5 V 34 nC ge C GE CE CES Q 60 nC gc t 30 ns d(on) Inductive load, T = 25C t 70 ns J ri I = 70A, V = 15V E 2.00 mJ C GE on Terminals: 1 = Gate V = 360V, R = 2 t 90 ns CE G 2,4 = Collector d(off) 3 = Emitter t 75 ns Note 2 fi E 0.95 1.40 mJ f of t 30 ns d(on) Inductive load, T = 150C t 65 ns J ri I = 70A, V = 15V E 3.00 mJ C GE on V = 360V, R = 2 t 105 ns CE G d(off) t 115 ns Note 2 fi E 1.40 mJ off R 0.18 C/W thJC R 0.15 C/W thCS TM PLUS247 Outline Reverse Diode (FRED) Symbol Test Conditions Characteristic Values (T = 25C Unless Otherwise Specified) Min. Typ. Max. J V I = 60A, V = 0V, Note 1 1.6 2.0 V F F GE T = 150C 1.4 1.8 V J I 8.3 A I = 60A, V = 0V, T = 100C RM F GE J Terminals: 1 - Gate t -di /dt = 200A/s, V = 300V 140 ns 2 - Collector rr F R 3 - Emitter R 0.30 C/W thJC Dim. Millimeter Inches Min. Max. Min. Max. A 4.83 5.21 .190 .205 A 2.29 2.54 .090 .100 1 A 1.91 2.16 .075 .085 2 Notes: b 1.14 1.40 .045 .055 b 1.91 2.13 .075 .084 1. Pulse test, t 300 s, duty cycle, d 2%. 1 b 2.92 3.12 .115 .123 2 2. Switching times & energy losses may increase for higher V (clamp), T or R . CE J G C 0.61 0.80 .024 .031 D 20.80 21.34 .819 .840 E 15.75 16.13 .620 .635 e 5.45 BSC .215 BSC L 19.81 20.32 .780 .800 L1 3.81 4.32 .150 .170 Q 5.59 6.20 .220 0.244 R 4.32 4.83 .170 .190 IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537