TM TM V = 650V XPT 650V GenX4 IXXK110N65B4H1 CES I = 110A w/ Sonic Diode IXXX110N65B4H1 C110 V 2.10V CE(sat) t = 43ns fi(typ) Extreme Light Punch Through IGBT for 10-30kHz Switching TO-264 (IXXK) Symbol Test Conditions Maximum Ratings G C V T = 25C to 175C 650 V CES J E V T = 25C to 175C, R = 1M 650 V Tab CGR J GE V Continuous 20 V GES PLUS247 (IXXX) V Transient 30 V GEM I T = 25C (Chip Capability) 250 A C25 C I Terminal Current Limit 160 A LRMS I T = 110C 110 A C110 C I T = 110C 78 A F110 C G G I T = 25C, 1ms 570 A C CM C Tab E SSOA V = 15V, T = 150C, R = 2 I = 220 A GE VJ G CM (RBSOA) Clamped Inductive Load V V CE CES G = Gate E = Emitter C = Collector Tab = Collector t V = 15V, V = 360V, T = 150C 10 s sc GE CE J (SCSOA) R = 82, Non Repetitive G P T = 25C 880 W C C Features T -55 ... +175 C J Optimized for 10-30kHz Switching T 175 C JM Square RBSOA T -55 ... +175 C stg Short Circuit Capability T Maximum Lead Temperature for Soldering 300 C L Anti-Parallel Sonic Diode T 1.6 mm (0.062in.) from Case for 10s 260 C SOLD High Current Handling Capability International Standard Packages M Mounting Torque (TO-264) 1.13/10 Nm/lb.in. d F Mounting Force (PLUS247) 20..120 /4.5..27 N/lb. C Weight TO-264 10 g Advantages PLUS247 6 g High Power Density Low Gate Drive Requirement Symbol Test Conditions Characteristic Values (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J Applications BV I = 250 A, V = 0V 650 V CES C GE V I = 250 A, V = V 4.0 6.5 V Power Inverters GE(th) C CE GE UPS I V = V , V = 0V 25 A CES CE CES GE Motor Drives T = 150C 3 mA SMPS J PFC Circuits I V = 0V, V = 20V 100 nA GES CE GE Battery Chargers V I = 110A, V = 15V, Note 1 1.72 2.10 V Welding Machines CE(sat) C GE T = 150C 2.05 V Lamp Ballasts J High Frequency Power Inverters 2016 IXYS CORPORATION, All Rights Reserved DS100502C(8/16 )IXXK110N65B4H1 IXXX110N65B4H1 Symbol Test Conditions Characteristic Values TO-264 Outline (T = 25C Unless Otherwise Specified) Min. Typ. Max. J g I = 60A, V = 10V, Note 1 30 52 S fs C CE C 5500 pF ies C V = 25V, V = 0V, f = 1MHz 470 pF oes CE GE C 80 pF res Q 183 nC g(on) Q I = 110A, V = 15V, V = 0.5 V 32 nC ge C GE CE CES Q 83 nC gc PINS: t 26 ns d(on) 1 - Gate 2,4 - Collector Inductive load, T = 25C t 40 ns J 3 - Emitter ri I = 55A, V = 15V E 2.20 mJ C GE on V = 400V, R = 2 t 146 ns CE G d(off) t 43 ns Note 2 fi E 1.05 1.70 mJ off t 25 ns d(on) Inductive load, T = 150C t 40 ns J ri I = 55A, V = 15V E 3.00 mJ C GE on V = 400V, R = 2 t 140 ns CE G d(off) t Note 2 110 ns fi E 2.16 mJ off R 0.17 C/W thJC R 0.15 C/W thCS TM PLUS247 Outline Reverse Sonic Diode (FRD) Symbol Test Conditions Characteristic Values (T = 25C Unless Otherwise Specified) Min. Typ. Max. J V I = 100A, V = 0V, Note 1 1.7 2.3 V F F GE T = 150C 1.8 V J I 95 A PINS: I = 100A, V = 0V, T = 150C RM F GE J 1 - Gate t -di /dt = 1500A/sV = 300V 100 ns 2 - Collector rr F R 3 - Emitter R 0.38 C/W thJC Notes: 1. Pulse test, t 300 s, duty cycle, d 2%. 2. Switching times & energy losses may increase for higher V (Clamp), T or R . CE J G IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537