Preliminary Technical Information TM V = 600V XPT 600V IGBTs IXXK200N60B3 CES TM I = 200A GenX3 IXXX200N60B3 C110 V 1.7V CE(sat) t = 110ns Extreme Light Punch Through fi(typ) IGBT for 10-30kHz Switching TO-264 (IXXK) Symbol Test Conditions Maximum Ratings G V T = 25C to 175C 600 V CES J C V T = 25C to 175C, R = 1M 600 V E CGR J GE Tab V Continuous 20 V GES V Transient 30 V GEM PLUS247 (IXXX) I T = 25C (Chip Capability) 380 A C25 C I Leads Current Limit 160 A LRMS I T = 110C 200 A C110 C I T = 25C, 1ms 900 A CM C G I T = 25C 100 A G A C C Tab E E T = 25C 1 J AS C SSOA V = 15V, T = 150C, R = 1 I = 400 A GE VJ G CM G = Gate E = Emitter (RBSOA) Clamped Inductive Load V V CE CES C = Collector Tab = Collector t V = 15V, V = 360V, T = 150C 10 s sc GE CE J (SCSOA) R = 10, Non Repetitive G P T = 25C 1630 W Features C C T -55 ... +175 C J z International Standard Packages T 175 C JM z Optimized for 10-30kHz Switching T -55 ... +175 C stg z Square RBSOA z Avalanche Rated T Maximum Lead Temperature for Soldering 300 C L z Short Circuit Capability T 1.6 mm (0.062in.) from Case for 10s 260 C SOLD z High Current Handling Capability M Mounting Torque (TO-264) 1.13/10 Nm/lb.in. d F Mounting Force (PLUS247) 20..120 /4.5..27 N/lb. C Advantages Weight TO-264 10 g PLUS247 6 g z High Power Density z Low Gate Drive Requirement Symbol Test Conditions Characteristic Values (T = 25C, Unless Otherwise Specified) Min. Typ. Max. Applications J BV I = 250A, V = 0V 600 V CES C GE z Power Inverters z V I = 250A, V = V 3.5 6.0 V UPS GE(th) C CE GE z Motor Drives I V = V , V = 0V 50 A z CES CE CES GE SMPS z T = 150C 3 mA PFC Circuits J z Battery Chargers I V = 0V, V = 20V 200 nA GES CE GE z Welding Machines z V I = 100A, V = 15V, Note 1 1.40 1.70 V Lamp Ballasts CE(sat) C GE T = 150C 1.58 V J 2013 IXYS CORPORATION, All Rights Reserved DS100372A(02/13)IXXK200N60B3 IXXX200N60B3 Symbol Test Conditions Characteristic Values TO-264 Outline (T = 25C Unless Otherwise Specified) Min. Typ. Max. J g I = 60A, V = 10V, Note 1 27 45 S fs C CE C 9970 pF ies C V = 25V, V = 0V, f = 1MHz 570 pF oes CE GE C 183 pF res Q 315 nC g(on) Q I = 200A, V = 15V, V = 0.5 V 98 nC ge C GE CE CES Q 130 nC gc t 48 ns d(on) Inductive load, T = 25C t 100 ns J ri I = 100A, V = 15V E 2.85 mJ C GE on Terminals: 1 = Gate V = 360V, R = 1 t 160 ns CE G 2,4 = Collector d(off) 3 = Emitter t 110 ns Note 2 fi E 2.90 4.40 mJ f of t 46 ns d(on) Inductive load, T = 150C t 94 ns J ri I = 100A, V = 15V E 4.40 mJ C GE on V = 360V, R = 1 t 180 ns CE G d(off) t 215 ns Note 2 fi E 3.45 mJ off R 0.092 C/W thJC R 0.15 C/W thCS TM PLUS247 Outline Notes: 1. Pulse test, t 300 s, duty cycle, d 2%. 2. Switching times & energy losses may increase for higher V (clamp), T or R . CE J G Terminals: 1 - Gate 2 - Collector 3 - Emitter Dim. Millimeter Inches Min. Max. Min. Max. A 4.83 5.21 .190 .205 PRELIMANARY TECHNICAL INFORMATION A 2.29 2.54 .090 .100 1 The product presented herein is under development. The Technical Specifications offered are derived A 1.91 2.16 .075 .085 2 from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a b 1.14 1.40 .045 .055considered reflectio of the anticipated result. IXYS reserves the right to change limits, test b 1.91 2.13 .075 .084 1 conditions, and dimensions without notice. b 2.92 3.12 .115 .123 2 C 0.61 0.80 .024 .031 D 20.80 21.34 .819 .840 E 15.75 16.13 .620 .635 e 5.45 BSC .215 BSC L 19.81 20.32 .780 .800 L1 3.81 4.32 .150 .170 Q 5.59 6.20 .220 0.244 R 4.32 4.83 .170 .190 IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537