TM V = 600V XPT 600V IGBTs IXXK200N60C3 CES TM I = 200A GenX3 IXXX200N60C3 C110 V 2.1V CE(sat) t = 80ns fi(typ) Extreme Light Punch Through IGBT for 20-60kHz Switching TO-264 (IXXK) Symbol Test Conditions Maximum Ratings G V T = 25C to 175C 600 V CES J C V T = 25C to 175C, R = 1M 600 V E CGR J GE Tab V Continuous 20 V GES V Transient 30 V GEM PLUS247 (IXXX) I T = 25C (Chip Capability) 340 A C25 C I Terminal Current Limit 160 A LRMS I T = 110C 200 A C110 C I T = 25C, 1ms 900 A CM C G I T = 25C 100 A G A C C Tab E E T = 25C 1 J AS C SSOA V = 15V, T = 150C, R = 1 I = 400 A GE VJ G CM G = Gate E = Emitter (RBSOA) Clamped Inductive Load V V CE CES C = Collector Tab = Collector t V = 15V, V = 360V, T = 150C 10 s sc GE CE J (SCSOA) R = 10, Non Repetitive G P T = 25C 1630 W C C Features T -55 ... +175 C J T 175 C International Standard Packages JM Optimized for 20-60kHz Switching T -55 ... +175 C stg Square RBSOA T Maximum Lead Temperature for Soldering 300 C Avalanche Rated L T 1.6 mm (0.062in.) from Case for 10s 260 C Short Circuit Capability SOLD High Current Handling Capability M Mounting Torque (TO-264) 1.13/10 Nm/lb.in d F Mounting Force (PLUS247) 20..120 /4.5..27 N/lb C Advantages Weight TO-264 10 g PLUS247 6 g High Power Density Low Gate Drive Requirement Symbol Test Conditions Characteristic Values (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J Applications BV I = 250 A, V = 0V 600 V CES C GE Power Inverters V I = 250 A, V = V 3.5 6.0 V GE(th) C CE GE UPS Motor Drives I V = V , V = 0V 50 A CES CE CES GE SMPS T = 150C 3 mA J PFC Circuits Battery Chargers I V = 0V, V = 20V 200 nA GES CE GE Welding Machines V I = 100A, V = 15V, Note 1 1.60 2.10 V CE(sat) C GE Lamp Ballasts T = 150C 1.93 V J 2013 IXYS CORPORATION, All Rights Reserved DS100373B(11/13)IXXK200N60C3 IXXX200N60C3 Symbol Test Conditions Characteristic Values TO-264 Outline (T = 25C Unless Otherwise Specified) Min. Typ. Max. J g I = 60A, V = 10V, Note 1 27 45 S fs C CE C 9900 pF ies C V = 25V, V = 0V, f = 1MHz 570 pF oes CE GE C 185 pF res Q 315 nC g(on) Q I = 200A, V = 15V, V = 0.5 V 134 nC ge C GE CE CES Q 98 nC gc t 47 ns d(on) Inductive load, T = 25C t 100 ns J ri I = 100A, V = 15V E 3.0 mJ C GE on Terminals: 1 = Gate V = 360V, R = 1 t 125 ns CE G 2,4 = Collector d(off) 3 = Emitter t 80 ns Note 2 fi E 1.7 2.6 mJ f of t 47 ns d(on) Inductive load, T = 150C t 96 ns J ri I = 100A, V = 15V E 4.0 mJ C GE on V = 360V, R = 1 t 150 ns CE G d(off) t 90 ns Note 2 fi E 2.1 mJ off R 0.092 C/W thJC R 0.15 C/W thCS TM PLUS247 Outline Notes: 1. Pulse test, t 300 s, duty cycle, d 2%. 2. Switching times & energy losses may increase for higher V (clamp), T or R . CE J G Terminals: 1 - Gate 2 - Collector 3 - Emitter Dim. Millimeter Inches Min. Max. Min. Max. A 4.83 5.21 .190 .205 A 2.29 2.54 .090 .100 1 A 1.91 2.16 .075 .085 2 b 1.14 1.40 .045 .055 b 1.91 2.13 .075 .084 1 b 2.92 3.12 .115 .123 2 C 0.61 0.80 .024 .031 D 20.80 21.34 .819 .840 E 15.75 16.13 .620 .635 e 5.45 BSC .215 BSC L 19.81 20.32 .780 .800 L1 3.81 4.32 .150 .170 Q 5.59 6.20 .220 0.244 R 4.32 4.83 .170 .190 IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537