TM V = 650V XPT 650V IGBT IXXK200N65B4 CES TM I = 200A GenX4 IXXX200N65B4 C110 V 1.70V CE(sat) t = 40ns Extreme Light Punch Through fi(typ) IGBT for 10-30kHz Switching TO-264 (IXXK) G C Symbol Test Conditions Maximum Ratings E Tab V T = 25C to 175C 650 V CES J V T = 25C to 175C, R = 1M 650 V CGR J GE PLUS247 (IXXX) V Continuous 20 V GES V Transient 30 V GEM I T = 25C (Chip Capability) 480 A C25 C I Lead Current Limit 160 A LRMS I T = 110C 200 A G C110 C G C I T = 25C, 1ms 1200 A Tab CM C E SSOA V = 15V, T = 150C, R = 1 I = 400 A GE VJ G CM (RBSOA) Clamped Inductive Load V V G = Gate E = Emitter CE CES C = Collector Tab = Collector t V = 15V, V = 360V, T = 150C 10 s sc GE CE J (SCSOA) R = 10, Non Repetitive G P T = 25C 1630 W C C Features T -55 ... +175 C J T 175 C Optimized for 10-30kHz Switching JM Square RBSOA T -55 ... +175 C stg Short Circuit Capability T Maximum Lead Temperature for Soldering 300 C L International Standard Packages T 1.6 mm (0.062in.) from Case for 10s 260 C High Current Handling Capability SOLD M Mounting Torque (TO-264) 1.13/10 Nm/lb.in d F Mounting Force (PLUS247) 20..120 /4.5..27 N/lb C Advantages Weight TO-264 10 g High Power Density PLUS247 6 g Low Gate Drive Requirement Applications Symbol Test Conditions Characteristic Values (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J Power Inverters BV I = 250A, V = 0V 650 V CES C GE UPS Motor Drives V I = 4mA, V = V 4.0 6.5 V GE(th) C CE GE SMPS I V = V , V = 0V 25 A CES CE CES GE PFC Circuits T = 150C 1.5 mA Battery Chargers J Welding Machines I V = 0V, V = 20V 200 nA GES CE GE Lamp Ballasts V I = 160A, V = 15V, Note 1 1.50 1.70 V CE(sat) C GE T = 150C 1.65 V J 2016 IXYS CORPORATION, All Rights Reserved DS100518D(10/16)IXXK200N65B4 IXXX200N65B4 Symbol Test Conditions Characteristic Values TO-264 Outline (T = 25C Unless Otherwise Specified) Min. Typ. Max. J g I = 60A, V = 10V, Note 1 60 100 S fs C CE C 17 nF ies C V = 25V, V = 0V, f = 1MHz 760 pF oes CE GE C 220 pF res Q 517 nC g(on) Q I = 200A, V = 15V, V = 0.5 V 150 nC ge C GE CE CES Q 205 nC gc t 45 ns d(on) t Inductive load, T = 25C 93 ns ri J E 6.0 mJ I = 100A, V = 15V on C GE t 226 ns V = 400V, R = 1 d(off) Terminals: 1 = Gate CE G 2,4 = Collector t 40 ns 3 = Emitter fi Note 2 E 2.7 mJ off t 45 ns d(on) Inductive load, T = 150C t 90 ns J ri I = 100A, V = 15V E 6.8 mJ C GE on V = 400V, R = 1 t 250 ns CE G d(off) t 120 ns fi Note 2 E 5.0 mJ off R 0.092 C/W thJC R 0.15 C/W thCS TM PLUS247 Outline Notes: 1. Pulse test, t 300 s, duty cycle, d 2%. 2. Switching times & energy losses may increase for higher V (clamp), T or R . CE J G Terminals: 1 - Gate 2,4 - Collector 3 - Emitter IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537