Preliminary Technical Information TM V = 600V XPT 600V IGBT IXXN200N60B3H1 CES TM I = 98A GenX3 w/Diode C110 V 1.7V CE(sat) t = 110ns fi(typ) Extreme Light Punch Through IGBT for 10-30kHz Switching SOT-227B, miniBLOC E153432 Symbol Test Conditions Maximum Ratings E c V T = 25C to 150C 600 V CES J G V T = 25C to 150C, R = 1M 600 V CGR J GE V Continuous 20 V GES V Transient 30 V GEM E c I T = 25C (Chip Capability) 200 A C25 C C I T = 110C 98 A C110 C I T = 110C 30 A F110 C G = Gate, C = Collector, E = Emitter I T = 25C, 1ms 1000 A c either emitter terminal can be used as CM C Main or Kelvin Emitter I T = 25C 100 A A C E T = 25C 1 J AS C Features SSOA V = 15V, T = 150C, R = 1 I = 400 A GE VJ G CM (RBSOA) Clamped Inductive Load V V CE CES z Silicon Chip on Direct-Copper Bond t V = 15V, V = 360V, T = 150C 10 s (DCB) Substrate sc GE CE J z miniBLOC, with Aluminium Nitride (SCSOA) R = 10, Non Repetitive G Isolation P T = 25C 780 W z C C Optimized for Low Conduction and Switching Losses T -55 ... +150 C J z Isolated Mounting Surface T 150 C JM z Anti-Parallel Ultra Fast Diode T -55 ... +150 C stg z 2500V~ Electrical Isolation z V 50/60Hz t = 1min 2500 V~ Optimized for 10-30kHz Switching ISOL z I 1mA t = 1s 3000 V~ Avalanche Rated ISOL z Short Circuit Capability M Mounting Torque 1.5/13 Nm/lb.in. z d Very High Current Capability Terminal Connection Torque 1.3/11.5 Nm/lb.in. z Square RBSOA Weight 30 g Advantages z High Power Density z Low Gate Drive Requirement Symbol Test Conditions Characteristic Values (T = 25C, Unless Otherwise Specified) Min. Typ. Max. Applications J BV I = 250A, V = 0V 600 V CES C GE z Power Inverters z V I = 250A, V = V 3.5 6.0 V UPS GE(th) C CE GE z Motor Drives I V = V , V = 0V 50 A CES CE CES GE z SMPS Note 2, T = 150C 3 mA z J PFC Circuits z Battery Chargers I V = 0V, V = 20V 200 nA GES CE GE z Welding Machines V I = 100A, V = 15V, Note 1 1.40 1.70 V z CE(sat) C GE Lamp Ballasts T = 150C 1.58 V J 2013 IXYS CORPORATION, All Rights Reserved DS100471A(02/13)IXXN200N60B3H1 Symbol Test Conditions Characteristic Values SOT-227B miniBLOC (IXXN) (T = 25C Unless Otherwise Specified) Min. Typ. Max. J g I = 60A, V = 10V, Note 1 27 45 S fs C CE C 9970 pF ies C V = 25V, V = 0V, f = 1MHz 570 pF oes CE GE C 183 pF res Q 315 nC g(on) Q I = 200A, V = 15V, V = 0.5 V 98 nC ge C GE CE CES Q 130 nC gc t 48 ns d(on) Inductive load, T = 25C t 100 ns J ri I = 100A, V = 15V E 2.85 mJ C GE on V = 360V, R = 1 t 160 ns CE G d(off) t 110 ns Note 3 fi E 2.90 4.40 mJ f of t 46 ns d(on) Inductive load, T = 150C t 94 ns J ri I = 100A, V = 15V E 4.40 mJ C GE on V = 360V, R = 1 t 180 ns CE G d(off) t 215 ns Note 3 fi E 3.45 mJ off R 0.16 C/W thJC R 0.05 C/W thCS Reverse Diode (FRED) Symbol Test Conditions Characteristic Values (T = 25C Unless Otherwise Specified) Min. Typ. Max. J V I = 100A, V = 0V, Note 1 2.5 V F F GE T = 150C 2.3 V J I 95 A I = 100A, V = 0V, T = 150C RM F GE J -di /dt = 1500A/s, V = 300V t 100 ns F R rr R 0.70 C/W thJC Notes: 1. Pulse test, t 300 s, duty cycle, d 2%. 2. Part must be heatsunk for high-temp Ices measurement. 3. Switching times & energy losses may increase for higher V (Clamp), T or R . CE J G PRELIMANARY TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute aconsidered reflectio of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537