TM XPT 600V IGBT V = 600V IXXR100N60B3H1 CES TM GenX3 w/ Diode I = 68A C110 V 1.80V CE(sat) (Electrically Isolated Tab) t = 150ns fi(typ) Extreme Light Punch Through IGBT for 10-30kHz Switching TM ISOPLUS247 Symbol Test Conditions Maximum Ratings V T = 25C to 150C 600 V CES J V T = 25C to 150C, R = 1M 600 V CGR J GE V Continuous 20 V GES V Transient 30 V GEM G C Isolated Tab E I T = 25C(Chip Capability) 145 A C25 C I T = 110C 68 A C110 C I T = 90C 54 A F90 C G = Gate C = Collector I T = 25C, 1ms 440 A CM C E = Emitter I T = 25C 50 A A C E T = 25C 600 mJ AS C SSOA V = 15V, T = 150C, R = 2 I = 200 A GE VJ G CM (RBSOA) Clamped Inductive Load V V CE CES Features t V = 15V, V = 360V, T = 150C 10 s sc GE CE J (SCSOA) R = 10, Non Repetitive G z Silicon Chip on Direct-Copper Bond P T = 25C 400 W (DCB) Substrate C C z Isolated Mounting Surface T -55 ... +150 C J z 2500V~ Electrical Isolation T 150 C JM z Optimized for 10-30kHz Switching T -55 ... +150 C stg z Square RBSOA z T Maximum Lead Temperature for Soldering 300 C Avalanche Rated L z T Plastic Body for 10s 260 C Short Circuit Capability SOLD z Anti-Parallel Ultra Fast Diode V 50/60 Hz, 1 Minute 2500 V~ ISOL z High Current Handling Capability F Mounting Force 20..120/4.5..27 N/lb. C Weight 5 g Advantages z High Power Density z Low Gate Drive Requirement Symbol Test Conditions Characteristic Values (T = 25C, Unless Otherwise Specified) Min. Typ. Max. J Applications BV I = 250A, V = 0V 600 V CES C GE z Power Inverters V I = 250A, V = V 3.0 5.5 V z GE(th) C CE GE UPS z Motor Drives I V = V , V = 0V 50 A CES CE CES GE z SMPS T = 125C 4 mA J z PFC Circuits z I V = 0V, V = 20V 100 nA Battery Chargers GES CE GE z Welding Machines V I = 70A, V = 15V, Note 1 1.50 1.80 V CE(sat) C GE T = 150C 1.77 V J 2013 IXYS CORPORATION, All Rights Reserved DS100420B(04/13)IXXR100N60B3H1 Symbol Test Conditions Characteristic Values ISOPLUS247 (IXXR) Outline (T = 25C Unless Otherwise Specified) Min. Typ. Max. J g I = 60A, V = 10V, Note 1 22 40 S C CE fs C 4860 pF ies C V = 25V, V = 0V, f = 1MHz 475 pF oes CE GE C 83 pF res Q 143 nC g(on) Q I = 70A, V = 15V, V = 0.5 V 37 nC ge C GE CE CES Q 60 nC gc t 30 ns d(on) Inductive load, T = 25C t 70 ns J ri I = 70A, V = 15V E 1.9 mJ C GE on V = 360V, R = 2 t 120 ns CE G d(off) t 150 ns Note 2 fi E 2.0 2.8 mJ f of t 32 ns d(on) Inductive load, T = 150C t 60 ns J ri I = 70A, V = 15V E 2.3 mJ C GE on V = 360V, R = 2 t CE G 150 ns d(off) t Note 2 200 ns fi E 2.8 mJ off R 0.31 C/W thJC R 0.15 C/W thCS 1 - Gate Reverse Diode (FRED) 2,4 - Collector 3 - Emiiter Symbol Test Conditions Characteristic Values (T = 25C Unless Otherwise Specified) Min. Typ. Max. J V I = 60A, V = 0V, Note 1 1.6 2.5 V F F GE T = 150C 1.4 1.8 V J I 8.3 A I = 60A, V = 0V, T = 100C RM F GE J t -di /dt = 200A/s, V = 300V 140 ns rr F R R 0.62 C/W thJC Notes: 1. Pulse test, t 300 s, duty cycle, d 2%. 2. Switching times & energy losses may increase for higher V (clamp), T or R . CE J G IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537