X-On Electronics has gained recognition as a prominent supplier of IXXR110N65B4H1 IGBT Transistors across the USA, India, Europe, Australia, and various other global locations. IXXR110N65B4H1 IGBT Transistors are a product manufactured by IXYS. We provide cost-effective solutions for IGBT Transistors, ensuring timely deliveries around the world.

IXXR110N65B4H1 IXYS

IXXR110N65B4H1 electronic component of IXYS
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Part No.IXXR110N65B4H1
Manufacturer: IXYS
Category: IGBT Transistors
Description: IGBT Transistors 650V/150A TRENCH IGBT GENX4 XPT
Datasheet: IXXR110N65B4H1 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 16.8588 ea
Line Total: USD 16.86 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Mon. 02 Dec to Wed. 04 Dec
MOQ : 1
Multiples : 1
1 : USD 16.8588
10 : USD 15.498
30 : USD 14.5584
120 : USD 13.068
270 : USD 12.744
510 : USD 11.4048
1020 : USD 11.124

0
Ship by Mon. 02 Dec to Wed. 04 Dec
MOQ : 1
Multiples : 1
1 : USD 16.4052
3 : USD 15.5097

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Configuration
Collector- Emitter Voltage VCEO Max
Collector-Emitter Saturation Voltage
Maximum Gate Emitter Voltage
Continuous Collector Current at 25 C
Gate-Emitter Leakage Current
Package / Case
Packaging
Technology
Mounting Style
Technology
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Series
Continuous Collector Current Ic Max
Brand
Product Type
Factory Pack Quantity :
Subcategory
Tradename
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the IXXR110N65B4H1 from our IGBT Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IXXR110N65B4H1 and other electronic components in the IGBT Transistors category and beyond.

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TM TM V = 650V XPT 650V GenX4 IXXR110N65B4H1 CES I = 70A w/ Sonic Diode C110 V 2.10V CE(sat) (Electrically Isolated Tab) t = 43ns fi(typ) Extreme Light Punch Through IGBT for 10-30kHz Switching TM ISOPLUS247 Symbol Test Conditions Maximum Ratings V T = 25C to 175C 650 V CES J V T = 25C to 175C, R = 1M 650 V CGR J GE G C V Continuous 20 V Isolated Tab E GES V Transient 30 V GEM I T = 25C (Chip Capability) 165 A C25 C G = Gate C = Collector I T = 110C 70 A C110 C E = Emitter I T = 110C 48 A F110 C I T = 25C, 1ms 490 A CM C SSOA V = 15V, T = 150C, R = 2 I = 220 A GE VJ G CM (RBSOA) Clamped Inductive Load V V CE CES Features t V = 15V, V = 360V, T = 150C 10 s sc GE CE J (SCSOA) R = 82, Non Repetitive G Silicon Chip on Direct-Copper Bond P T = 25C 455 W C C (DCB) Substrate Isolated Mounting Surface T -55 ... +175 C J 2500V~ Electrical Isolation T 175 C JM Optimized for 10-30kHz Switching T -55 ... +175 C stg Square RBSOA T Maximum Lead Temperature for Soldering 300 C L Short Circuit Capability T 1.6 mm (0.062in.) from Case for 10s 260 C Anti-Parallel Sonic Diode SOLD High Current Handling Capability V 50/60 Hz, 1 Minute 2500 V ISOL F Mounting Force 20..120/4.5..27 N/lb C Advantages Weight 5 g High Power Density Low Gate Drive Requirement Symbol Test Conditions Characteristic Values Applications (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J BV I = 250A, V = 0V 650 V Power Inverters CES C GE UPS V I = 250A, V = V 4.0 6.5 V GE(th) C CE GE Motor Drives I V = V , V = 0V 25 A SMPS CES CE CES GE PFC Circuits T = 150C 3 A J Battery Chargers I V = 0V, V = 20V 100 nA GES CE GE Welding Machines Lamp Ballasts V I = 110A, V = 15V, Note 1 1.72 2.10 V CE(sat) C GE High Frequency Power Inverters T = 150C 2.05 V J 2016 IXYS CORPORATION, All Rights Reserved DS100529C(8/16)IXXR110N65B4H1 Symbol Test Conditions Characteristic Values ISOPLUS247 (IXXR) Outline (T = 25C Unless Otherwise Specified) Min. Typ. Max. J g I = 60A, V = 10V, Note 1 30 52 S fs C CE C 5500 pF ies C V = 25V, V = 0V, f = 1MHz 470 pF oes CE GE C 80 pF res Q 183 nC g(on) Q I = 110A, V = 15V, V = 0.5 V 32 nC ge C GE CE CES Q 83 nC gc t 26 ns d(on) Inductive load, T = 25C t 40 ns J ri I = 55A, V = 15V E 2.20 mJ C GE on V = 400V, R = 2 1 - Gate t 146 ns CE G d(off) 2 - Collector t 43 ns Note 2 fi 3 - Emitter E 1.05 1.70 mJ off t 25 ns d(on) t Inductive load, T = 150C 40 ns ri J E I = 55A, V = 15V 3.00 mJ on C GE t 140 ns V = 400V, R = 2 d(off) CE G t 110 ns fi Note 2 E 2.16 mJ off R 0.33 C/W thJC R 0.15 C/W thCS Reverse Sonic Diode (FRD) Symbol Test Conditions Characteristic Values (T = 25C Unless Otherwise Specified) Min. Typ. Max. J V I = 100A, V = 0V, Note 1 1.7 2.3 V F F GE T = 150C 1.8 V J I 95 A I = 100A, V = 0V, T = 150C RM F GE J t -di /dt = 1500A/sV = 300V 100 ns rr F R R 0.70 C/W thJC Notes: 1. Pulse test, t 300 s, duty cycle, d 2%. 2. Switching times & energy losses may increase for higher V (Clamp), T or R . CE J G IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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