TM V = 600V XPT 600V IGBTs IXXK100N60B3H1 CES TM I = 100A GenX3 w/ Diode IXXX100N60B3H1 C100 V 1.80V CE(sat) t = 150ns fi(typ) Extreme Light Punch Through IGBT for 10-30kHz Switching TO-264 (IXXK) Symbol Test Conditions Maximum Ratings V T = 25C to 150C 600 V CES J G V T = 25C to 150C, R = 1M 600 V CGR J GE C E V Continuous 20 V GES Tab V Transient 30 V GEM PLUS247 (IXXX) I T = 25C (Chip Capability) 200 A C25 C I Terminal Current Limit 160 A LRMS I T = 100C 100 A C100 C I T = 110C 65 A F110 C I T = 25C, 1ms 440 A CM C G I T = 25C 50 A G A C C Tab E E T = 25C 600 mJ AS C SSOA V = 15V, T = 150C, R = 2 I = 200 A GE VJ G CM G = Gate E = Emitter (RBSOA) Clamped Inductive Load V V CE CES C = Collector Tab = Collector t V = 15V, V = 360V, T = 150C 10 s sc GE CE J (SCSOA) R = 10, Non Repetitive G Features P T = 25C 695 W C C z T -55 ... +150 C J Optimized for 10-30kHz Switching z T 150 C Square RBSOA JM z Avalanche Rated T -55 ... +150 C stg z Short Circuit Capability T Maximum Lead Temperature for Soldering 300 C L z Anti-Parallel Ultra Fast Diode T 1.6 mm (0.062in.) from Case for 10s 260 C SOLD z High Current Handling Capability M Mounting Torque (TO-264) 1.13/10 Nm/lb.in. d F Mounting Force (PLUS247) 20..120 /4.5..27 N/lb. C Advantages Weight TO-264 10 g z PLUS247 6 g High Power Density z Low Gate Drive Requirement Symbol Test Conditions Characteristic Values Applications (T = 25C, Unless Otherwise Specified) Min. Typ. Max. J z BV I = 250A, V = 0V 600 V Power Inverters CES C GE z UPS V I = 250A, V = V 3.0 5.5 V GE(th) C CE GE z Motor Drives z SMPS I V = V , V = 0V 50 A CES CE CES GE z PFC Circuits T = 125C 4 mA J z Battery Chargers z I V = 0V, V = 20V 100 nA Welding Machines GES CE GE z Lamp Ballasts V I = 70A, V = 15V, Note 1 1.50 1.80 V CE(sat) C GE T = 150C 1.77 V J 2013 IXYS CORPORATION, All Rights Reserved DS100285D(04/13)IXXK100N60B3H1 IXXX100N60B3H1 Symbol Test Conditions Characteristic Values TO-264 Outline (T = 25C Unless Otherwise Specified) Min. Typ. Max. J g I = 60A, V = 10V, Note 1 22 40 S C CE fs C 4860 pF ies C V = 25V, V = 0V, f = 1MHz 475 pF oes CE GE C 83 pF res Q 143 nC g(on) Q I = 70A, V = 15V, V = 0.5 V 37 nC ge C GE CE CES Q 60 nC gc t 30 ns d(on) Inductive load, T = 25C t 70 ns J ri I = 70A, V = 15V E 1.9 mJ C GE on Terminals: 1 = Gate V = 360V, R = 2 t 120 ns CE G 2,4 = Collector d(off) 3 = Emitter t 150 ns Note 2 fi E 2.0 2.8 mJ f of t 32 ns d(on) Inductive load, T = 150C t 60 ns J ri I = 70A, V = 15V E 2.3 mJ C GE on V = 360V, R = 2 t CE G 150 ns d(off) t Note 2 200 ns fi E 2.8 mJ off R 0.18 C/W thJC R 0.15 C/W thCS TM PLUS247 Outline Reverse Diode (FRED) Symbol Test Conditions Characteristic Values (T = 25C Unless Otherwise Specified) Min. Typ. Max. J V I = 60A, V = 0V, Note 1 1.6 2.5 V F F GE T = 150C 1.4 1.8 V J I 8.3 A I = 60A, V = 0V, T = 100C RM F GE J Terminals: 1 - Gate t -di /dt = 200A/s, V = 300V 140 ns 2 - Collector rr F R 3 - Emitter R 0.30 C/W thJC Dim. Millimeter Inches Min. Max. Min. Max. A 4.83 5.21 .190 .205 A 2.29 2.54 .090 .100 1 A 1.91 2.16 .075 .085 2 b 1.14 1.40 .045 .055 Notes: b 1.91 2.13 .075 .084 1 1. Pulse test, t 300 s, duty cycle, d 2%. b 2.92 3.12 .115 .123 2 2. Switching times & energy losses may increase for higher V (clamp), T or R . C 0.61 0.80 .024 .031 CE J G D 20.80 21.34 .819 .840 E 15.75 16.13 .620 .635 e 5.45 BSC .215 BSC L 19.81 20.32 .780 .800 L1 3.81 4.32 .150 .170 Q 5.59 6.20 .220 0.244 R 4.32 4.83 .170 .190 IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537