Preliminary Technical Information TM TM V = 650V XPT 650V GenX4 IXXX140N65B4H1 CES I = 140A w/ Sonic Diode C110 V 1.90V CE(sat) t = 44ns fi(typ) Extreme Light Punch Through IGBT for 10-30kHz Switching PLUS247 (IXXX) Symbol Test Conditions Maximum Ratings V T = 25C to 175C 650 V CES J V T = 25C to 175C, R = 1M 650 V CGR J GE V Continuous 20 V GES G V Transient 30 V GEM G C Tab E I T = 25C (Chip Capability) 340 A C25 C I Terminal Current Limit 160 A LRMS I T = 110C 140 A G = Gate E = Emitter C110 C I T = 110C 72 A C = Collector Tab = Collector F110 C I T = 25C, 1ms 840 A CM C SSOA V = 15V, T = 150C, R = 4.7 I = 240 A GE VJ G CM (RBSOA) Clamped Inductive Load V V CE CES t V = 15V, V = 400V, T = 150C 10 s sc GE CE J Features (SCSOA) R = 10, Non Repetitive G Optimized for 10-30kHz Switching P T = 25C 1200 W C C Square RBSOA T -55 ... +175 C J Short Circuit Capability T 175 C JM Anti-Parallel Sonic Diode T -55 ... +175 C stg High Current Handling Capability International Standard Package T Maximum Lead Temperature for Soldering 300 C L T 1.6 mm (0.062in.) from Case for 10s 260 C SOLD F Mounting Force 20..120 /4.5..27 N/lb Advantages C Weight 6 g High Power Density Low Gate Drive Requirement Applications Symbol Test Conditions Characteristic Values (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J Power Inverters UPS BV I = 250A, V = 0V 650 V CES C GE Motor Drives V I = 250A, V = V 4.0 6.5 V SMPS GE(th) C CE GE PFC Circuits I V = V , V = 0V 25 A CES CE CES GE Battery Chargers T = 150C 5 mA J Welding Machines Lamp Ballasts I V = 0V, V = 20V 100 nA GES CE GE High Frequency Power Inverters V I = 120A, V = 15V, Note 1 1.55 1.90 V CE(sat) C GE T = 150C 1.76 V J 2016 IXYS CORPORATION, All Rights Reserved DS100651B(7/16)IXXX140N65B4H1 Symbol Test Conditions Characteristic Values TM PLUS247 Outline (T = 25C Unless Otherwise Specified) Min. Typ. Max. J g I = 60A, V = 10V, Note 1 40 70 S fs C CE C 8000 pF ies C V = 25V, V = 0V, f = 1MHz 560 pF oes CE GE C 107 pF res Q 250 nC g(on) Q I = 140A, V = 15V, V = 0.5 V 70 nC ge C GE CE CES Q 90 nC gc t 54 ns d(on) Inductive load, T = 25C Terminals: 1 - Gate t 105 ns J ri 2,4 - Collector I = 100A, V = 15V E 5.75 mJ 3 - Emitter C GE on V = 400V, R = 4.7 t 270 ns CE G d(off) t 44 ns Note 2 fi E 2.67 mJ off t 43 ns d(on) Inductive load, T = 150C t J 85 ns ri I = 100A, V = 15V E C GE 6.80 mJ on V = 400V, R = 4.7 t 240 ns CE G d(off) t 100 ns Note 2 fi E 3.90 mJ off R 0.125 C/W thJC R 0.15 C/W thCS Reverse Sonic Diode (FRD) Symbol Test Conditions Characteristic Values (T = 25C Unless Otherwise Specified) Min. Typ. Max. J V I = 100A, V = 0V, Note 1 2.1 2.5 V F F GE T = 150C 2.2 V J I 43 A I = 100A, V = 0V, T = 150C RM F GE J t 210-di /dt = 600A/ sV = 400V ns rr F R R 0.24 C/W thJC Notes: 1. Pulse test, t 300 s, duty cycle, d 2%. 2. Switching times & energy losses may increase for higher V (Clamp), T or R . CE J G PRELIMINARY TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experi- ence, and constitute aconsidered reflectio of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537